P-22: High Performance a-IGZO TFT Backplanes with Cu Gate and Source/Drain Electrodes for AMOLED Displays

We have developed the fabrication processes for bottom gate and etch stopper‐type a‐IGZO TFT with Cu gate and source/drain electrodes. After optimizing the multi‐layer stack structure of the gate insulator, the deposition processes for the gate insulator, a‐ IGZO and etch stopper layers, and tuning...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1198-1200
Hauptverfasser:	Zhu, Xiaming, Jiang, Chunsheng, Yuan, Guangcai, Liu, Wei, Li, Xuyuan, Xin, Longbao, Wang, Meili, Wang, Gang
Format:	Artikel
Sprache:	eng
Schlagworte:	a-IGZO TFT AMOLED backplane Backplanes Copper Cu electrode Drains Electrodes Etching fabrication process Gates Semiconductor devices Thin film transistors
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