18.4: 13.3-inch 8k4k 664-ppi Foldable OLED Display Using Crystalline Oxide Semiconductor FETs

18.4: 13.3-inch 8k4k 664-ppi Foldable OLED Display Using Crystalline Oxide Semiconductor FETs

A prototype 13.3‐inch 8k4k 664‐ppi high‐resolution foldable OLED display is constructed. C‐axis aligned crystalline In—Ga—Zn oxide (CAAC‐IGZO) FETs designed using a 1.5‐µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is u...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.250-253
Hauptverfasser: Takahashi, Kei, Sato, Takehisa, Yamamoto, Roh, Shishido, Hideaki, Isa, Toshiyuki, Eguchi, Shingo, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Sato, Rai, Matsumoto, Hironori, Yazaki, Naomi
Format: Artikel
Sprache:eng
Schlagworte:
8k4k
CAAC-IGZO
Capacitors
Crystal structure
Electric circuits
external correction circuit
flexible
foldable
high resolution
OLED
oxide semiconductor
Oxides
Pixels
Semiconductor devices
Semiconductors
Technical papers
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Beschreibung
Zusammenfassung:A prototype 13.3‐inch 8k4k 664‐ppi high‐resolution foldable OLED display is constructed. C‐axis aligned crystalline In—Ga—Zn oxide (CAAC‐IGZO) FETs designed using a 1.5‐µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10453