Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures

Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 °C. Structural and morphological properties were investigated using X-ray diffraction, field emission scanning e...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (32), p.8336-8343
Hauptverfasser:	Choi, Yong-June, Kang, Kyung-Mun, Lee, Hong-Sub, Park, Hyung-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Chlorine Deposition Diffraction Doping Field emission Planes X-rays Zinc oxide
Online-Zugang:	Volltext
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