A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer
Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylat...
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Veröffentlicht in: | Nanoscale 2015-08, Vol.7 (32), p.13489-13494 |
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container_issue | 32 |
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container_title | Nanoscale |
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creator | Lim, Namsoo Pak, Yusin Kim, Jin Tae Hwang, Youngkyu Lee, Ryeri Kumaresan, Yogeenth Myoung, NoSoung Ko, Heung Cho Jung, Gun Young |
description | Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. |
doi_str_mv | 10.1039/c5nr02786a |
format | Article |
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To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.</description><identifier>ISSN: 2040-3364</identifier><identifier>EISSN: 2040-3372</identifier><identifier>DOI: 10.1039/c5nr02786a</identifier><identifier>PMID: 26198752</identifier><language>eng</language><publisher>England</publisher><subject>Contact ; Etching ; Interlayers ; Masks ; Membranes ; Nanostructure ; Polymethyl methacrylates ; Silicon substrates</subject><ispartof>Nanoscale, 2015-08, Vol.7 (32), p.13489-13494</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-7e8f73e28c35ad83c98edc3da03fb8b19fc1ef0a3a7419f62cc549886ddf57b33</citedby><cites>FETCH-LOGICAL-c320t-7e8f73e28c35ad83c98edc3da03fb8b19fc1ef0a3a7419f62cc549886ddf57b33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26198752$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lim, Namsoo</creatorcontrib><creatorcontrib>Pak, Yusin</creatorcontrib><creatorcontrib>Kim, Jin Tae</creatorcontrib><creatorcontrib>Hwang, Youngkyu</creatorcontrib><creatorcontrib>Lee, Ryeri</creatorcontrib><creatorcontrib>Kumaresan, Yogeenth</creatorcontrib><creatorcontrib>Myoung, NoSoung</creatorcontrib><creatorcontrib>Ko, Heung Cho</creatorcontrib><creatorcontrib>Jung, Gun Young</creatorcontrib><title>A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer</title><title>Nanoscale</title><addtitle>Nanoscale</addtitle><description>Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. 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The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.</description><subject>Contact</subject><subject>Etching</subject><subject>Interlayers</subject><subject>Masks</subject><subject>Membranes</subject><subject>Nanostructure</subject><subject>Polymethyl methacrylates</subject><subject>Silicon substrates</subject><issn>2040-3364</issn><issn>2040-3372</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqNkclK7EAUhgu54rzxAaSWFyFaQ1LD3YXGCZwQXYeTyolGk0rfqoSmH8G3Nq2ta1dn-vjg8BNyyNkJZ9KeuswHJrRRsEF2BEtZIqUWf356lW6T3RhfGVNWKrlFtoXi1uhM7JD3nA6jh7JFGscy4YxR39HYtI3rPfXg-3kfkEIIsKSLZnih4Gme39EOuzKAR9pBfPtHA1aja_wzHf0C_IDVpAs1OKQ4uJfVoVzSxg-hX3NA729u8tUKQwtLDPtks4Y24sG67pGn87PH2WVyfXdxNcuvEycFGxKNptYShXEyg8pIZw1WTlbAZF2aktvacawZSNDpNCjhXJZaY1RV1Zkupdwjf7-889D_HzEORddEh207PdOPseCaG5sqY_UvUCZUarWxE3r8hbrQxxiwLuah6SAsC86KVUrFLLt9-Ewpn-CjtXcsO6x-0O9Y5AcxrY3v</recordid><startdate>20150828</startdate><enddate>20150828</enddate><creator>Lim, Namsoo</creator><creator>Pak, Yusin</creator><creator>Kim, Jin Tae</creator><creator>Hwang, Youngkyu</creator><creator>Lee, Ryeri</creator><creator>Kumaresan, Yogeenth</creator><creator>Myoung, NoSoung</creator><creator>Ko, Heung Cho</creator><creator>Jung, Gun Young</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150828</creationdate><title>A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer</title><author>Lim, Namsoo ; Pak, Yusin ; Kim, Jin Tae ; Hwang, Youngkyu ; Lee, Ryeri ; Kumaresan, Yogeenth ; Myoung, NoSoung ; Ko, Heung Cho ; Jung, Gun Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-7e8f73e28c35ad83c98edc3da03fb8b19fc1ef0a3a7419f62cc549886ddf57b33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Contact</topic><topic>Etching</topic><topic>Interlayers</topic><topic>Masks</topic><topic>Membranes</topic><topic>Nanostructure</topic><topic>Polymethyl methacrylates</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lim, Namsoo</creatorcontrib><creatorcontrib>Pak, Yusin</creatorcontrib><creatorcontrib>Kim, Jin Tae</creatorcontrib><creatorcontrib>Hwang, Youngkyu</creatorcontrib><creatorcontrib>Lee, Ryeri</creatorcontrib><creatorcontrib>Kumaresan, Yogeenth</creatorcontrib><creatorcontrib>Myoung, NoSoung</creatorcontrib><creatorcontrib>Ko, Heung Cho</creatorcontrib><creatorcontrib>Jung, Gun Young</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanoscale</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lim, Namsoo</au><au>Pak, Yusin</au><au>Kim, Jin Tae</au><au>Hwang, Youngkyu</au><au>Lee, Ryeri</au><au>Kumaresan, Yogeenth</au><au>Myoung, NoSoung</au><au>Ko, Heung Cho</au><au>Jung, Gun Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer</atitle><jtitle>Nanoscale</jtitle><addtitle>Nanoscale</addtitle><date>2015-08-28</date><risdate>2015</risdate><volume>7</volume><issue>32</issue><spage>13489</spage><epage>13494</epage><pages>13489-13494</pages><issn>2040-3364</issn><eissn>2040-3372</eissn><abstract>Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.</abstract><cop>England</cop><pmid>26198752</pmid><doi>10.1039/c5nr02786a</doi><tpages>6</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals; Alma/SFX Local Collection |
subjects | Contact Etching Interlayers Masks Membranes Nanostructure Polymethyl methacrylates Silicon substrates |
title | A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer |
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