Effects of Sb addition on ZnO grain growth and the electrical characteristics of Ba-added-Bi-based ZnO varistors
The varistor voltage increases as the number of ZnO grain boundaries between electrodes increases. Therefore, in order to fabricate varistors with low varistor voltages, it is necessary to reduce the number of ZnO grain boundaries between electrodes. The present study uses this method for increasing...
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| Veröffentlicht in: | Journal of physics. Conference series 2012-01, Vol.339 (1), p.12005-6 |
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| container_title | Journal of physics. Conference series |
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| creator | Fukumori, A Kubota, A Sato, Y Yoshikado, S |
| description | The varistor voltage increases as the number of ZnO grain boundaries between electrodes increases. Therefore, in order to fabricate varistors with low varistor voltages, it is necessary to reduce the number of ZnO grain boundaries between electrodes. The present study uses this method for increasing the ZnO grain size. With the goal of fabricating varistors with low varistor voltages, the effect on the ZnO grain size of adding Sb to Bi- Ba-Co-Mn-added ZnO varistors was investigated. Ba was added in order to increase the ZnO grain size, and Sb was added in order to achieve a uniform ZnO grain size without reducing the grain size. The addition of a small amount of Sb reduced the formation of ZnO grains having a smaller grain size, and the addition of 0.02 mol% Sb to the 0.5-mol%-Bi- and 0.5 mol% Ba added ZnO varistor exhibited a low varistor voltage of approximately 31 V/mm and the highest resistance to electrical degradation, because compounds containing both Ba and Mn do not form at grain boundaries between ZnO grains. |
| doi_str_mv | 10.1088/1742-6596/339/1/012005 |
| format | Article |
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Therefore, in order to fabricate varistors with low varistor voltages, it is necessary to reduce the number of ZnO grain boundaries between electrodes. The present study uses this method for increasing the ZnO grain size. With the goal of fabricating varistors with low varistor voltages, the effect on the ZnO grain size of adding Sb to Bi- Ba-Co-Mn-added ZnO varistors was investigated. Ba was added in order to increase the ZnO grain size, and Sb was added in order to achieve a uniform ZnO grain size without reducing the grain size. The addition of a small amount of Sb reduced the formation of ZnO grains having a smaller grain size, and the addition of 0.02 mol% Sb to the 0.5-mol%-Bi- and 0.5 mol% Ba added ZnO varistor exhibited a low varistor voltage of approximately 31 V/mm and the highest resistance to electrical degradation, because compounds containing both Ba and Mn do not form at grain boundaries between ZnO grains.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/339/1/012005</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Antimony ; Bismuth ; Electric potential ; Electronic devices ; Grain boundaries ; Grain growth ; Grain size ; Manganese ; Physics ; Varistors ; Voltage ; Zinc oxide</subject><ispartof>Journal of physics. 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Conference series</title><description>The varistor voltage increases as the number of ZnO grain boundaries between electrodes increases. Therefore, in order to fabricate varistors with low varistor voltages, it is necessary to reduce the number of ZnO grain boundaries between electrodes. The present study uses this method for increasing the ZnO grain size. With the goal of fabricating varistors with low varistor voltages, the effect on the ZnO grain size of adding Sb to Bi- Ba-Co-Mn-added ZnO varistors was investigated. Ba was added in order to increase the ZnO grain size, and Sb was added in order to achieve a uniform ZnO grain size without reducing the grain size. The addition of a small amount of Sb reduced the formation of ZnO grains having a smaller grain size, and the addition of 0.02 mol% Sb to the 0.5-mol%-Bi- and 0.5 mol% Ba added ZnO varistor exhibited a low varistor voltage of approximately 31 V/mm and the highest resistance to electrical degradation, because compounds containing both Ba and Mn do not form at grain boundaries between ZnO grains.</description><subject>Antimony</subject><subject>Bismuth</subject><subject>Electric potential</subject><subject>Electronic devices</subject><subject>Grain boundaries</subject><subject>Grain growth</subject><subject>Grain size</subject><subject>Manganese</subject><subject>Physics</subject><subject>Varistors</subject><subject>Voltage</subject><subject>Zinc oxide</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkUtLAzEUhYMoWKt_QQJu3IxNJpNkZmlLfUChC3XjJmTysCnTSU1SxX9vppUuvISbQL57ONwDwDVGdxjV9QTzqiwYbdiEkGaCJwiXCNETMDp-nB7fdX0OLmJcI0Ry8RHYzq01KkXoLXxpodTaJed7mM97v4QfQbo-d_-dVlD2GqaVgabLE8Ep2UG1kkGqZIKLyam9ylQWWcXoYuqKVkaj90JfckB8iJfgzMoumqu_ewzeHuavs6disXx8nt0vCkUwTgWhLFtGJadl0xjKeGu0tkRZYnnVGoYqiqoWs7ZtqMIKU2RsqZGmlNaa64qMwe1Bdxv8587EJDYuKtN1sjd-FwXmuG4qUtMyozf_0LXfhT67EyXlvGGopE2m2IFSwccYjBXb4DYy_AiMxBCEGHYshn2LHITA4hAE-QXyOHqQ</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Fukumori, A</creator><creator>Kubota, A</creator><creator>Sato, Y</creator><creator>Yoshikado, S</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20120101</creationdate><title>Effects of Sb addition on ZnO grain growth and the electrical characteristics of Ba-added-Bi-based ZnO varistors</title><author>Fukumori, A ; Kubota, A ; Sato, Y ; Yoshikado, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-3561740275299e567beddf3cf3f74be604504b16bb95c1c150ef2d0d5558d7d43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Antimony</topic><topic>Bismuth</topic><topic>Electric potential</topic><topic>Electronic devices</topic><topic>Grain boundaries</topic><topic>Grain growth</topic><topic>Grain size</topic><topic>Manganese</topic><topic>Physics</topic><topic>Varistors</topic><topic>Voltage</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fukumori, A</creatorcontrib><creatorcontrib>Kubota, A</creatorcontrib><creatorcontrib>Sato, Y</creatorcontrib><creatorcontrib>Yoshikado, S</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. 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| subjects | Antimony Bismuth Electric potential Electronic devices Grain boundaries Grain growth Grain size Manganese Physics Varistors Voltage Zinc oxide |
| title | Effects of Sb addition on ZnO grain growth and the electrical characteristics of Ba-added-Bi-based ZnO varistors |
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