The Universal Edge Physics in Fractional Quantum Hall Liquids
The chiral Luttinger liquid theory for fractional quantum Hall edge transport predicts universal power-law behavior in the current-voltage (I-V) characteristics for electrons tunneling into the edge. However, it has not been unambiguously observed in experiments in two-dimensional electron gases bas...
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| Veröffentlicht in: | Journal of physics. Conference series 2012-01, Vol.402 (1), p.12017-7 |
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| container_title | Journal of physics. Conference series |
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| creator | Hu, Zi-Xiang Bhatt, R N Wan, Xin Yang, Kun |
| description | The chiral Luttinger liquid theory for fractional quantum Hall edge transport predicts universal power-law behavior in the current-voltage (I-V) characteristics for electrons tunneling into the edge. However, it has not been unambiguously observed in experiments in two-dimensional electron gases based on GaAs/GaAlAs heterostructures or quantum wells. One plausible cause is the fractional quantum Hall edge reconstruction, which introduces non-chiral edge modes. The coupling between counterpropagating edge modes can modify the exponent of the I-V characteristics. By comparing the v = 1/3 fractional quantum Hall states in modulation-doped semiconductor devices and in graphene devices, we show that the graphene-based systems have an experimental accessible parameter region to avoid the edge reconstruction, which is suitable for the exploration of the universal edge tunneling exponent predicted by the chiral Luttinger liquid theory. |
| doi_str_mv | 10.1088/1742-6596/402/1/012017 |
| format | Article |
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However, it has not been unambiguously observed in experiments in two-dimensional electron gases based on GaAs/GaAlAs heterostructures or quantum wells. One plausible cause is the fractional quantum Hall edge reconstruction, which introduces non-chiral edge modes. The coupling between counterpropagating edge modes can modify the exponent of the I-V characteristics. By comparing the v = 1/3 fractional quantum Hall states in modulation-doped semiconductor devices and in graphene devices, we show that the graphene-based systems have an experimental accessible parameter region to avoid the edge reconstruction, which is suitable for the exploration of the universal edge tunneling exponent predicted by the chiral Luttinger liquid theory.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/402/1/012017</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Accessibility ; Current voltage characteristics ; Electron tunneling ; Exploration ; Exponents ; Graphene ; Heterostructures ; Liquids ; Physics ; Quantum wells ; Reconstruction ; Semiconductor devices ; Transport</subject><ispartof>Journal of physics. 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By comparing the v = 1/3 fractional quantum Hall states in modulation-doped semiconductor devices and in graphene devices, we show that the graphene-based systems have an experimental accessible parameter region to avoid the edge reconstruction, which is suitable for the exploration of the universal edge tunneling exponent predicted by the chiral Luttinger liquid theory.</description><subject>Accessibility</subject><subject>Current voltage characteristics</subject><subject>Electron tunneling</subject><subject>Exploration</subject><subject>Exponents</subject><subject>Graphene</subject><subject>Heterostructures</subject><subject>Liquids</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>Reconstruction</subject><subject>Semiconductor devices</subject><subject>Transport</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkE1Lw0AQhhdRsFb_gix48RKzX9mPgwcprRUKKrTnZZps7JY0aXcTof--CZUenMsMvA8zzIPQIyUvlGidUiVYIjMjU0FYSlNCGaHqCo0uwfVl1voW3cW4JYT3pUbodblxeFX7XxciVHha_Dj8tTlGn0fsazwLkLe-qfvou4O67XZ4DlWFF_7Q-SLeo5sSquge_voYrWbT5WSeLD7fPyZviyTnUrQJNwBSGgZUSFXmimfcybV0pSiNBlJwzQgDlRlmIF-DUswUWhlwRBQlKQwfo-fz3n1oDp2Lrd35mLuqgto1XbRUUW36U2JAn_6h26YL_QPRskxpJllGSU_JM5WHJsbgSrsPfgfhaCmxg1U7CLODPNtbtdSerfIT8PVoag</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Hu, Zi-Xiang</creator><creator>Bhatt, R N</creator><creator>Wan, Xin</creator><creator>Yang, Kun</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20120101</creationdate><title>The Universal Edge Physics in Fractional Quantum Hall Liquids</title><author>Hu, Zi-Xiang ; Bhatt, R N ; Wan, Xin ; Yang, Kun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-39aa6692a1467fc7353e6b6ef4f98a0d38202a75929acba7729d879ae04df0d93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Accessibility</topic><topic>Current voltage characteristics</topic><topic>Electron tunneling</topic><topic>Exploration</topic><topic>Exponents</topic><topic>Graphene</topic><topic>Heterostructures</topic><topic>Liquids</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>Reconstruction</topic><topic>Semiconductor devices</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Zi-Xiang</creatorcontrib><creatorcontrib>Bhatt, R N</creatorcontrib><creatorcontrib>Wan, Xin</creatorcontrib><creatorcontrib>Yang, Kun</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. 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| subjects | Accessibility Current voltage characteristics Electron tunneling Exploration Exponents Graphene Heterostructures Liquids Physics Quantum wells Reconstruction Semiconductor devices Transport |
| title | The Universal Edge Physics in Fractional Quantum Hall Liquids |
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