The influence of atomic ordering on strain relaxation during the growth of metamorphic solar cells

The occurrence of single variant CuPtB ordering during growth of InGaP graded buffer layer structures on offcut (001) GaAs substrates for inverted metamorphic solar cells is found to have a strong influence on strain relaxation mechanisms. Since the surface-induced CuPtB ordering is metastable in th...

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Veröffentlicht in:	Journal of Physics: Conference Series 2013-11, Vol.471 (1), p.12006-10
Hauptverfasser:	Norman, A G, France, R M, McMahon, W E, Geisz, J F, Romero, M J
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiphase boundaries Buffer layers CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Density Devices Dislocation density Dislocations Gallium indium phosphide Glide Materials science Misfit dislocations Nucleation Order disorder Photovoltaic cells Physics Solar cells SOLAR ENERGY Solar Energy - Photovoltaics Strain relaxation Substrates Threading dislocations
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