In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and com...

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Veröffentlicht in:	Journal of crystal growth 2015-04, Vol.415, p.1-6
Hauptverfasser:	Prall, C, Kaspari, C, Brunner, F, Haberland, K, Weyers, M, Rueter, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Gallium nitrides Indium gallium nitrides Photoluminescence Spectra Spectral emissivity Vapor phase epitaxy Wavelengths
Online-Zugang:	Volltext
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