Electrophysical properties of PCM-materials in crystalline and amorphous states
The temperature dependences of the resistivity, thermopower, and Nernst coefficient were experimentally investigated on the samples of phase change materials with a composition of Ge0.15Sb0.85 in both the amorphous and crystalline states. It was observed that the crystalline state is characterized b...
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| Veröffentlicht in: | Journal of physics. Conference series 2015-01, Vol.586 (1), p.12009-5 |
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| container_title | Journal of physics. Conference series |
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| creator | Gaydamaka, A V Martynova, O A Vladimirskaya, E V Gasumyants, V E |
| description | The temperature dependences of the resistivity, thermopower, and Nernst coefficient were experimentally investigated on the samples of phase change materials with a composition of Ge0.15Sb0.85 in both the amorphous and crystalline states. It was observed that the crystalline state is characterized by a metallic type of the thermopower temperature dependences, while the resistivity increases slightly with decreasing temperature and the Nernst coefficient has a positive value and demonstrates the complicated temperature dependence. The conductivity in the amorphous state has an activated character with two different activation energies in low and high temperature ranges; the temperature of the transition between these ranges corresponds to the point of a change of thermopower sign. The results obtained point to a need to take into account a contribution of two types of carriers in the conduction process in both phase states. |
| doi_str_mv | 10.1088/1742-6596/586/1/012009 |
| format | Article |
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| subjects | Activated Amorphous materials Carriers Coefficients Crystal structure Crystallinity Electrical resistivity High temperature Phase change materials Physics Temperature dependence Thermoelectricity |
| title | Electrophysical properties of PCM-materials in crystalline and amorphous states |
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