Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu
Single-layer graphene was grown on copper at a low temperature of 600°C by plasma-assisted thermal chemical vapor deposition. Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (Hx, CHx, and Cx) without the addition...
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| Veröffentlicht in: | Journal of nanomaterials 2015, Vol.2015 (2015), p.1-5 |
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| container_issue | 2015 |
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| container_title | Journal of nanomaterials |
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| creator | Kuo, Chien-Cheng Chen, Sheng-Hui Wei, Hung-Sen Chen, Hung-Pin Liao, Shih-Fang Chan, Shih-Hao Lee, Cheng-Chung |
| description | Single-layer graphene was grown on copper at a low temperature of 600°C by plasma-assisted thermal chemical vapor deposition. Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (Hx, CHx, and Cx) without the addition of flowing hydrogen, and the amounts of hydrogen-containing species can be controlled by varying the plasma power. The effective distance was found between the plasma initial stage and the deposition stage for the single-layer graphene synthesis. The results reveal that high-quality graphene can be synthesized using methane plasma at a suitable plasma power. |
| doi_str_mv | 10.1155/2015/423237 |
| format | Article |
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Its growth mechanism was discussed with reference to the emission spectra of the plasma. The methane plasma produces the active species (Hx, CHx, and Cx) without the addition of flowing hydrogen, and the amounts of hydrogen-containing species can be controlled by varying the plasma power. The effective distance was found between the plasma initial stage and the deposition stage for the single-layer graphene synthesis. The results reveal that high-quality graphene can be synthesized using methane plasma at a suitable plasma power.</description><identifier>ISSN: 1687-4110</identifier><identifier>EISSN: 1687-4129</identifier><identifier>DOI: 10.1155/2015/423237</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Publishing Corporation</publisher><subject>Carbon ; Chemical vapor deposition ; Copper ; Decomposition ; Defects ; Deposition ; Electrodes ; Graphene ; Graphite ; Hydrocarbons ; Methane ; Monitoring ; Nanomaterials ; Physical properties ; Plasma etching ; Quality ; Spectra ; Spectrum analysis ; Synthesis</subject><ispartof>Journal of nanomaterials, 2015, Vol.2015 (2015), p.1-5</ispartof><rights>Copyright © 2015 Shih-Hao Chan et al.</rights><rights>Copyright © 2015 Shih-Hao Chan et al. Shih-Hao Chan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-9683-8948 ; 0000-0001-8922-1931 ; 0000-0003-0032-6433</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><contributor>Ho, Ying-Lung Daniel</contributor><creatorcontrib>Kuo, Chien-Cheng</creatorcontrib><creatorcontrib>Chen, Sheng-Hui</creatorcontrib><creatorcontrib>Wei, Hung-Sen</creatorcontrib><creatorcontrib>Chen, Hung-Pin</creatorcontrib><creatorcontrib>Liao, Shih-Fang</creatorcontrib><creatorcontrib>Chan, Shih-Hao</creatorcontrib><creatorcontrib>Lee, Cheng-Chung</creatorcontrib><title>Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu</title><title>Journal of nanomaterials</title><description>Single-layer graphene was grown on copper at a low temperature of 600°C by plasma-assisted thermal chemical vapor deposition. 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The results reveal that high-quality graphene can be synthesized using methane plasma at a suitable plasma power.</description><subject>Carbon</subject><subject>Chemical vapor deposition</subject><subject>Copper</subject><subject>Decomposition</subject><subject>Defects</subject><subject>Deposition</subject><subject>Electrodes</subject><subject>Graphene</subject><subject>Graphite</subject><subject>Hydrocarbons</subject><subject>Methane</subject><subject>Monitoring</subject><subject>Nanomaterials</subject><subject>Physical properties</subject><subject>Plasma etching</subject><subject>Quality</subject><subject>Spectra</subject><subject>Spectrum analysis</subject><subject>Synthesis</subject><issn>1687-4110</issn><issn>1687-4129</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RHX</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpd0N9LwzAQB_AgCs7pk-8S8EWEutylaZpHKboJG4rTB59ClqWuo2tqfzD239tSEfHl7jg-HMeXkEtgdwBCTJCBmITIkcsjMoIolkEIqI5_Z2Cn5Kyut4yFQgkckY9l6WxTmZwufJE1vsqKT5rMJgnSV9NknvqULlyzMYWjL7mpd4amvqLTyu97uexK7oK5Obh-acqN66AvaNKek5PU5LW7-Olj8v748JbMgvnz9Cm5nwcOIy6DSMZrtOEKw9BZo1AicCZtLGxsVGiUWwmLqUUuAC0YtxbAV6kUqVMKUmb4mNwMd8vKf7WubvQuq63L8-5l39YaJMQKGWfY0et_dOvbqui-0xApIVEIFnbqdlCbrFibfabLKtuZ6qCB6T5l3aesh5Q7fDVg1xGXmj84Ugw4_wbRH3X8</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>Kuo, Chien-Cheng</creator><creator>Chen, Sheng-Hui</creator><creator>Wei, Hung-Sen</creator><creator>Chen, Hung-Pin</creator><creator>Liao, Shih-Fang</creator><creator>Chan, Shih-Hao</creator><creator>Lee, Cheng-Chung</creator><general>Hindawi Publishing Corporation</general><general>Hindawi Limited</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CWDGH</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>F28</scope><scope>FR3</scope><orcidid>https://orcid.org/0000-0001-9683-8948</orcidid><orcidid>https://orcid.org/0000-0001-8922-1931</orcidid><orcidid>https://orcid.org/0000-0003-0032-6433</orcidid></search><sort><creationdate>2015</creationdate><title>Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu</title><author>Kuo, Chien-Cheng ; 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| subjects | Carbon Chemical vapor deposition Copper Decomposition Defects Deposition Electrodes Graphene Graphite Hydrocarbons Methane Monitoring Nanomaterials Physical properties Plasma etching Quality Spectra Spectrum analysis Synthesis |
| title | Spectral Monitoring CH/C2 Ratio of Methane Plasma for Growing Single-Layer Graphene on Cu |
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