Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2

The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly...

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Veröffentlicht in:Nano letters 2015-09, Vol.15 (9), p.5883-5887
Hauptverfasser: Grubišić Čabo, Antonija, Miwa, Jill A, Grønborg, Signe S, Riley, Jonathon M, Johannsen, Jens C, Cacho, Cephise, Alexander, Oliver, Chapman, Richard T, Springate, Emma, Grioni, Marco, Lauritsen, Jeppe V, King, Phil D. C, Hofmann, Philip, Ulstrup, Søren
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container_end_page 5887
container_issue 9
container_start_page 5883
container_title Nano letters
container_volume 15
creator Grubišić Čabo, Antonija
Miwa, Jill A
Grønborg, Signe S
Riley, Jonathon M
Johannsen, Jens C
Cacho, Cephise
Alexander, Oliver
Chapman, Richard T
Springate, Emma
Grioni, Marco
Lauritsen, Jeppe V
King, Phil D. C
Hofmann, Philip
Ulstrup, Søren
description The dynamics of excited electrons and holes in single layer (SL) MoS2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.
doi_str_mv 10.1021/acs.nanolett.5b01967
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