Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases dra...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-01, Vol.87 (4), Article 045315 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 87 |
| creator | Terent'ev, Ya. V. Mukhin, M. S. Toropov, A. A. Nestoklon, M. O. Meltser, B. Ya Semenov, A. N. Solov'ev, V. A. Ivanov, S. V. |
| description | Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g factor of both types of carriers. The hole ground state in a monolayer-scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model. |
| doi_str_mv | 10.1103/PhysRevB.87.045315 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1709779530</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1709779530</sourcerecordid><originalsourceid>FETCH-LOGICAL-c280t-b0ee26f0a679ddb8c27dc7d0037dfdbb751fb4182c430948f3d409fef10ee10a3</originalsourceid><addsrcrecordid>eNo1kE1Lw0AYhBdRsFb_gKc9ekn77ke6ybEWrYGixQ8QL0uy-y6NJJua3Qj990aqp5nDzDA8hFwzmDEGYr7dHcIzft_OMjUDmQqWnpAJS1NIuEjfT0cPeZYA4-ycXITwCcBkLvmEPG53Xeyaoa09BoPeIA1xsDUG2jn6gdiWnqJzaCKtPY2HPSZFQQv_Us0LvwzUl74LsR9MHHoMl-TMlU3Aqz-dkrf7u9fVQ7J5Wher5SYxPIOYVIDIFw7KhcqtrTLDlTXKAghlna0qlTJXSZZxIwXkMnPCSsgdOjYWGZRiSm6Ou_u--xowRN3W4_2mKT12Q9BMQa5UngoYo_wYNX0XQo9O7_u6LfuDZqB_4el_eDpT-ghP_AARr2VP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1709779530</pqid></control><display><type>article</type><title>Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures</title><source>American Physical Society Journals</source><creator>Terent'ev, Ya. V. ; Mukhin, M. S. ; Toropov, A. A. ; Nestoklon, M. O. ; Meltser, B. Ya ; Semenov, A. N. ; Solov'ev, V. A. ; Ivanov, S. V.</creator><creatorcontrib>Terent'ev, Ya. V. ; Mukhin, M. S. ; Toropov, A. A. ; Nestoklon, M. O. ; Meltser, B. Ya ; Semenov, A. N. ; Solov'ev, V. A. ; Ivanov, S. V.</creatorcontrib><description>Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g factor of both types of carriers. The hole ground state in a monolayer-scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.87.045315</identifier><language>eng</language><subject>Condensed matter ; Emission ; Indium antimonides ; Indium arsenides ; Insertion ; Intermetallics ; Mathematical models ; Polarization</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2013-01, Vol.87 (4), Article 045315</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c280t-b0ee26f0a679ddb8c27dc7d0037dfdbb751fb4182c430948f3d409fef10ee10a3</citedby><cites>FETCH-LOGICAL-c280t-b0ee26f0a679ddb8c27dc7d0037dfdbb751fb4182c430948f3d409fef10ee10a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids></links><search><creatorcontrib>Terent'ev, Ya. V.</creatorcontrib><creatorcontrib>Mukhin, M. S.</creatorcontrib><creatorcontrib>Toropov, A. A.</creatorcontrib><creatorcontrib>Nestoklon, M. O.</creatorcontrib><creatorcontrib>Meltser, B. Ya</creatorcontrib><creatorcontrib>Semenov, A. N.</creatorcontrib><creatorcontrib>Solov'ev, V. A.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><title>Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures</title><title>Physical review. B, Condensed matter and materials physics</title><description>Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g factor of both types of carriers. The hole ground state in a monolayer-scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.</description><subject>Condensed matter</subject><subject>Emission</subject><subject>Indium antimonides</subject><subject>Indium arsenides</subject><subject>Insertion</subject><subject>Intermetallics</subject><subject>Mathematical models</subject><subject>Polarization</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo1kE1Lw0AYhBdRsFb_gKc9ekn77ke6ybEWrYGixQ8QL0uy-y6NJJua3Qj990aqp5nDzDA8hFwzmDEGYr7dHcIzft_OMjUDmQqWnpAJS1NIuEjfT0cPeZYA4-ycXITwCcBkLvmEPG53Xeyaoa09BoPeIA1xsDUG2jn6gdiWnqJzaCKtPY2HPSZFQQv_Us0LvwzUl74LsR9MHHoMl-TMlU3Aqz-dkrf7u9fVQ7J5Wher5SYxPIOYVIDIFw7KhcqtrTLDlTXKAghlna0qlTJXSZZxIwXkMnPCSsgdOjYWGZRiSm6Ou_u--xowRN3W4_2mKT12Q9BMQa5UngoYo_wYNX0XQo9O7_u6LfuDZqB_4el_eDpT-ghP_AARr2VP</recordid><startdate>20130128</startdate><enddate>20130128</enddate><creator>Terent'ev, Ya. V.</creator><creator>Mukhin, M. S.</creator><creator>Toropov, A. A.</creator><creator>Nestoklon, M. O.</creator><creator>Meltser, B. Ya</creator><creator>Semenov, A. N.</creator><creator>Solov'ev, V. A.</creator><creator>Ivanov, S. V.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130128</creationdate><title>Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures</title><author>Terent'ev, Ya. V. ; Mukhin, M. S. ; Toropov, A. A. ; Nestoklon, M. O. ; Meltser, B. Ya ; Semenov, A. N. ; Solov'ev, V. A. ; Ivanov, S. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c280t-b0ee26f0a679ddb8c27dc7d0037dfdbb751fb4182c430948f3d409fef10ee10a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter</topic><topic>Emission</topic><topic>Indium antimonides</topic><topic>Indium arsenides</topic><topic>Insertion</topic><topic>Intermetallics</topic><topic>Mathematical models</topic><topic>Polarization</topic><toplevel>online_resources</toplevel><creatorcontrib>Terent'ev, Ya. V.</creatorcontrib><creatorcontrib>Mukhin, M. S.</creatorcontrib><creatorcontrib>Toropov, A. A.</creatorcontrib><creatorcontrib>Nestoklon, M. O.</creatorcontrib><creatorcontrib>Meltser, B. Ya</creatorcontrib><creatorcontrib>Semenov, A. N.</creatorcontrib><creatorcontrib>Solov'ev, V. A.</creatorcontrib><creatorcontrib>Ivanov, S. V.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Terent'ev, Ya. V.</au><au>Mukhin, M. S.</au><au>Toropov, A. A.</au><au>Nestoklon, M. O.</au><au>Meltser, B. Ya</au><au>Semenov, A. N.</au><au>Solov'ev, V. A.</au><au>Ivanov, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2013-01-28</date><risdate>2013</risdate><volume>87</volume><issue>4</issue><artnum>045315</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g factor of both types of carriers. The hole ground state in a monolayer-scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.</abstract><doi>10.1103/PhysRevB.87.045315</doi></addata></record> |
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| language | eng |
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| source | American Physical Society Journals |
| subjects | Condensed matter Emission Indium antimonides Indium arsenides Insertion Intermetallics Mathematical models Polarization |
| title | Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T08%3A12%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20studies%20of%20Zeeman%20effect%20in%20type-II%20InSb/InAs%20nanostructures&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Terent'ev,%20Ya.%20V.&rft.date=2013-01-28&rft.volume=87&rft.issue=4&rft.artnum=045315&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.87.045315&rft_dat=%3Cproquest_cross%3E1709779530%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1709779530&rft_id=info:pmid/&rfr_iscdi=true |