Parallel field magnetoresistance in topological insulator thin films
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi sub(2)Se sub(3) and (Bi sub(1-x)Sb sub(x)) sub(2)Te sub(3) thin films are compared w...
Gespeichert in:
| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-07, Vol.88 (4), Article 041307 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 4 |
| container_start_page | |
| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 88 |
| creator | Lin, C. J. He, X. Y. Liao, J. Wang, X. X. IV, V. Sacksteder Yang, W. M. Guan, T. Zhang, Q. M. Gu, L. Zhang, G. Y. Zeng, C. G. Dai, X. Wu, K. H. Li, Y. Q. |
| description | We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi sub(2)Se sub(3) and (Bi sub(1-x)Sb sub(x)) sub(2)Te sub(3) thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the Tl thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials. |
| doi_str_mv | 10.1103/PhysRevB.88.041307 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1709775742</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1709775742</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-8f621195648f128a5bc9c6e9258e695ae69811f66d0bd6c3b630e2fc236b363b3</originalsourceid><addsrcrecordid>eNo1kE1LAzEQhoMoWKt_wNMevWzNJJtsctT6CQWLKHgL2XTSrmQ3NdkK_feuVC_zzjAP7-Eh5BLoDIDy6-Vmn1_x-3am1IxWwGl9RCYgBC0ZFx_H4061KikwOCVnOX9SCpWu2ITcLW2yIWAofIthVXR23eMQE-Y2D7Z3WLR9McRtDHHdOhvGM--CHYli2Iwv34Yun5MTb0PGi7-ckveH-7f5U7l4eXye3yxKx5keSuUlA9BCVsoDU1Y0TjuJmgmFUgs7DgXgpVzRZiUdbySnyLxjXDZc8oZPydWhd5vi1w7zYLo2OwzB9hh32UBNdV2LumIjyg6oSzHnhN5sU9vZtDdAza8y86_MKGUOyvgPp19hUQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1709775742</pqid></control><display><type>article</type><title>Parallel field magnetoresistance in topological insulator thin films</title><source>American Physical Society Journals</source><creator>Lin, C. J. ; He, X. Y. ; Liao, J. ; Wang, X. X. ; IV, V. Sacksteder ; Yang, W. M. ; Guan, T. ; Zhang, Q. M. ; Gu, L. ; Zhang, G. Y. ; Zeng, C. G. ; Dai, X. ; Wu, K. H. ; Li, Y. Q.</creator><creatorcontrib>Lin, C. J. ; He, X. Y. ; Liao, J. ; Wang, X. X. ; IV, V. Sacksteder ; Yang, W. M. ; Guan, T. ; Zhang, Q. M. ; Gu, L. ; Zhang, G. Y. ; Zeng, C. G. ; Dai, X. ; Wu, K. H. ; Li, Y. Q.</creatorcontrib><description>We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi sub(2)Se sub(3) and (Bi sub(1-x)Sb sub(x)) sub(2)Te sub(3) thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the Tl thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.88.041307</identifier><language>eng</language><subject>Bulk transporters ; Condensed matter ; Insulators ; Magnetoresistance ; Magnetoresistivity ; Thin films ; Topology ; Transport</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2013-07, Vol.88 (4), Article 041307</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-8f621195648f128a5bc9c6e9258e695ae69811f66d0bd6c3b630e2fc236b363b3</citedby><cites>FETCH-LOGICAL-c329t-8f621195648f128a5bc9c6e9258e695ae69811f66d0bd6c3b630e2fc236b363b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids></links><search><creatorcontrib>Lin, C. J.</creatorcontrib><creatorcontrib>He, X. Y.</creatorcontrib><creatorcontrib>Liao, J.</creatorcontrib><creatorcontrib>Wang, X. X.</creatorcontrib><creatorcontrib>IV, V. Sacksteder</creatorcontrib><creatorcontrib>Yang, W. M.</creatorcontrib><creatorcontrib>Guan, T.</creatorcontrib><creatorcontrib>Zhang, Q. M.</creatorcontrib><creatorcontrib>Gu, L.</creatorcontrib><creatorcontrib>Zhang, G. Y.</creatorcontrib><creatorcontrib>Zeng, C. G.</creatorcontrib><creatorcontrib>Dai, X.</creatorcontrib><creatorcontrib>Wu, K. H.</creatorcontrib><creatorcontrib>Li, Y. Q.</creatorcontrib><title>Parallel field magnetoresistance in topological insulator thin films</title><title>Physical review. B, Condensed matter and materials physics</title><description>We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi sub(2)Se sub(3) and (Bi sub(1-x)Sb sub(x)) sub(2)Te sub(3) thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the Tl thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.</description><subject>Bulk transporters</subject><subject>Condensed matter</subject><subject>Insulators</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Thin films</subject><subject>Topology</subject><subject>Transport</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo1kE1LAzEQhoMoWKt_wNMevWzNJJtsctT6CQWLKHgL2XTSrmQ3NdkK_feuVC_zzjAP7-Eh5BLoDIDy6-Vmn1_x-3am1IxWwGl9RCYgBC0ZFx_H4061KikwOCVnOX9SCpWu2ITcLW2yIWAofIthVXR23eMQE-Y2D7Z3WLR9McRtDHHdOhvGM--CHYli2Iwv34Yun5MTb0PGi7-ckveH-7f5U7l4eXye3yxKx5keSuUlA9BCVsoDU1Y0TjuJmgmFUgs7DgXgpVzRZiUdbySnyLxjXDZc8oZPydWhd5vi1w7zYLo2OwzB9hh32UBNdV2LumIjyg6oSzHnhN5sU9vZtDdAza8y86_MKGUOyvgPp19hUQ</recordid><startdate>20130722</startdate><enddate>20130722</enddate><creator>Lin, C. J.</creator><creator>He, X. Y.</creator><creator>Liao, J.</creator><creator>Wang, X. X.</creator><creator>IV, V. Sacksteder</creator><creator>Yang, W. M.</creator><creator>Guan, T.</creator><creator>Zhang, Q. M.</creator><creator>Gu, L.</creator><creator>Zhang, G. Y.</creator><creator>Zeng, C. G.</creator><creator>Dai, X.</creator><creator>Wu, K. H.</creator><creator>Li, Y. Q.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130722</creationdate><title>Parallel field magnetoresistance in topological insulator thin films</title><author>Lin, C. J. ; He, X. Y. ; Liao, J. ; Wang, X. X. ; IV, V. Sacksteder ; Yang, W. M. ; Guan, T. ; Zhang, Q. M. ; Gu, L. ; Zhang, G. Y. ; Zeng, C. G. ; Dai, X. ; Wu, K. H. ; Li, Y. Q.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-8f621195648f128a5bc9c6e9258e695ae69811f66d0bd6c3b630e2fc236b363b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Bulk transporters</topic><topic>Condensed matter</topic><topic>Insulators</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Thin films</topic><topic>Topology</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, C. J.</creatorcontrib><creatorcontrib>He, X. Y.</creatorcontrib><creatorcontrib>Liao, J.</creatorcontrib><creatorcontrib>Wang, X. X.</creatorcontrib><creatorcontrib>IV, V. Sacksteder</creatorcontrib><creatorcontrib>Yang, W. M.</creatorcontrib><creatorcontrib>Guan, T.</creatorcontrib><creatorcontrib>Zhang, Q. M.</creatorcontrib><creatorcontrib>Gu, L.</creatorcontrib><creatorcontrib>Zhang, G. Y.</creatorcontrib><creatorcontrib>Zeng, C. G.</creatorcontrib><creatorcontrib>Dai, X.</creatorcontrib><creatorcontrib>Wu, K. H.</creatorcontrib><creatorcontrib>Li, Y. Q.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, C. J.</au><au>He, X. Y.</au><au>Liao, J.</au><au>Wang, X. X.</au><au>IV, V. Sacksteder</au><au>Yang, W. M.</au><au>Guan, T.</au><au>Zhang, Q. M.</au><au>Gu, L.</au><au>Zhang, G. Y.</au><au>Zeng, C. G.</au><au>Dai, X.</au><au>Wu, K. H.</au><au>Li, Y. Q.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Parallel field magnetoresistance in topological insulator thin films</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2013-07-22</date><risdate>2013</risdate><volume>88</volume><issue>4</issue><artnum>041307</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi sub(2)Se sub(3) and (Bi sub(1-x)Sb sub(x)) sub(2)Te sub(3) thin films are compared with existing theoretical models of parallel field magnetotransport. We conclude that the Tl thin films bring parallel field transport into a unique regime in which the coupling of surface states to bulk and to opposite surfaces is indispensable for understanding the observed MR. The beta parameter extracted from parallel field MR can in principle provide a figure of merit for searching TI compounds with more insulating bulk than existing materials.</abstract><doi>10.1103/PhysRevB.88.041307</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2013-07, Vol.88 (4), Article 041307 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1709775742 |
| source | American Physical Society Journals |
| subjects | Bulk transporters Condensed matter Insulators Magnetoresistance Magnetoresistivity Thin films Topology Transport |
| title | Parallel field magnetoresistance in topological insulator thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A23%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Parallel%20field%20magnetoresistance%20in%20topological%20insulator%20thin%20films&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Lin,%20C.%20J.&rft.date=2013-07-22&rft.volume=88&rft.issue=4&rft.artnum=041307&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.88.041307&rft_dat=%3Cproquest_cross%3E1709775742%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1709775742&rft_id=info:pmid/&rfr_iscdi=true |