Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics

The initial oxidation of 4H-SiC is investigated under realistic temperature and pressure conditions in order to better understand the mechanism of defect creation at the SiO sub(2)/SiC interface. The oxidation reaction commences on a clean 4H-SiC (0001) surface with chemisorption of the on-surface o...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-02, Vol.87 (8)
Hauptverfasser:	Li, Wenbo, Zhao, Jijun, Zhu, Qiaozhi, Wang, Dejun
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemisorption Condensed matter Defects Oxidation Oxygen atoms Silicon carbide Silicon dioxide Surface chemistry
Online-Zugang:	Volltext
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