Origination of the direct-indirect band gap transition in strained wurtzite and zinc-blende GaAs nanowires: A first principles study

Recent work has demonstrated that uni-axial strain applied to wurtzite (WZ) GaAs nanowires leads to an interesting direct-indirect band gap transition. Here, we explored the potential of strain engineering on electronic structures of one-dimensional WZ and zinc-blende (ZB) GaAs nanowires along the (...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-03, Vol.87 (11), Article 115308
Hauptverfasser:	Peng, Xihong, Copple, Andrew
Format:	Artikel
Sprache:	eng
Schlagworte:	Chairs Condensed matter Cross sections Gallium arsenide Gallium arsenides Nanowires Strain Wurtzite
Online-Zugang:	Volltext
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