Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics
Purpose - The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach - The modeling of current-voltage cha...
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| Veröffentlicht in: | Multidiscipline modeling in materials and structures 2014-10, Vol.10 (3), p.362-378 |
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| creator | S Tonkoshkur, Alexander V Ivanchenko, Alexander |
| description | Purpose - The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach - The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings - The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate "microvaristor" with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value - The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown. |
| doi_str_mv | 10.1108/MMMS-11-2013-0066 |
| format | Article |
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Design/methodology/approach - The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings - The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate "microvaristor" with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value - The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.</description><identifier>ISSN: 1573-6105</identifier><identifier>EISSN: 1573-6113</identifier><identifier>DOI: 10.1108/MMMS-11-2013-0066</identifier><language>eng</language><publisher>Bingley: Emerald Group Publishing Limited</publisher><subject>Barriers ; Ceramics ; Electronic devices ; Mathematical models ; Nonlinearity ; Potential barriers ; Semiconductors ; Varistors</subject><ispartof>Multidiscipline modeling in materials and structures, 2014-10, Vol.10 (3), p.362-378</ispartof><rights>Emerald Group Publishing Limited 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-caf31b17a4bf3427bdb1ba9e40a31f9715c3450d0ca7132e6be67bab0bd2d9683</citedby><cites>FETCH-LOGICAL-c306t-caf31b17a4bf3427bdb1ba9e40a31f9715c3450d0ca7132e6be67bab0bd2d9683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,962,21676,27905,27906</link.rule.ids></links><search><creatorcontrib>S Tonkoshkur, Alexander</creatorcontrib><creatorcontrib>V Ivanchenko, Alexander</creatorcontrib><title>Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics</title><title>Multidiscipline modeling in materials and structures</title><description>Purpose - The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach - The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings - The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate "microvaristor" with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value - The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.</description><subject>Barriers</subject><subject>Ceramics</subject><subject>Electronic devices</subject><subject>Mathematical models</subject><subject>Nonlinearity</subject><subject>Potential barriers</subject><subject>Semiconductors</subject><subject>Varistors</subject><issn>1573-6105</issn><issn>1573-6113</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNpdkE1LxDAQhosouH78AG8BL16qmaZN7FHEL3DxoJ7DJJ3uRrrNOmlF_70tigdP8_LyzDA8WXYC8hxAXl4sl8vnHCAvJKhcSq13sgVURuUaQO3-ZVntZwcpvUlZQqnNIlsvY0Nd6FcitsKPzNQP-UfsBlyR8Gtk9ANxSEPwMzGsSYR-alaM_dghC4fMgXhqxYYG7ET8DA2JD5yXIgtPjJvg01G212KX6Ph3Hmavtzcv1_f549Pdw_XVY-6V1EPusVXgwGDpWlUWxjUOHNZUSlTQ1gYqr8pKNtKjAVWQdqSNQyddUzS1vlSH2dnP3S3H95HSYDcheeo67CmOyYKRtSkrbaoJPf2HvsWR--k7C7qCAqAuZwp-KM8xJabWbjlskL8sSDu7t7P7KdnZvZ3dq28WFHkA</recordid><startdate>20141007</startdate><enddate>20141007</enddate><creator>S Tonkoshkur, Alexander</creator><creator>V Ivanchenko, Alexander</creator><general>Emerald Group Publishing Limited</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>LK8</scope><scope>M7P</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141007</creationdate><title>Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics</title><author>S Tonkoshkur, Alexander ; V Ivanchenko, Alexander</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-caf31b17a4bf3427bdb1ba9e40a31f9715c3450d0ca7132e6be67bab0bd2d9683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Barriers</topic><topic>Ceramics</topic><topic>Electronic devices</topic><topic>Mathematical models</topic><topic>Nonlinearity</topic><topic>Potential barriers</topic><topic>Semiconductors</topic><topic>Varistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>S Tonkoshkur, Alexander</creatorcontrib><creatorcontrib>V Ivanchenko, Alexander</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest Biological Science Collection</collection><collection>Biological Science Database</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Multidiscipline modeling in materials and structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>S Tonkoshkur, Alexander</au><au>V Ivanchenko, Alexander</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics</atitle><jtitle>Multidiscipline modeling in materials and structures</jtitle><date>2014-10-07</date><risdate>2014</risdate><volume>10</volume><issue>3</issue><spage>362</spage><epage>378</epage><pages>362-378</pages><issn>1573-6105</issn><eissn>1573-6113</eissn><abstract>Purpose - The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach - The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings - The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate "microvaristor" with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value - The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.</abstract><cop>Bingley</cop><pub>Emerald Group Publishing Limited</pub><doi>10.1108/MMMS-11-2013-0066</doi><tpages>17</tpages></addata></record> |
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| source | Emerald Journals; Standard: Emerald eJournal Premier Collection |
| subjects | Barriers Ceramics Electronic devices Mathematical models Nonlinearity Potential barriers Semiconductors Varistors |
| title | Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics |
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