Designs of Silicon MIS Phase Modulator With a Deposited AlN Film as the Gate Dielectric

We propose and analyze a silicon metal-insulator- semiconductor phase modulator based on a poly-Si/AlN/Si horizontal slot waveguide. The AlN gate dielectric exhibits an inherent Pockels effect, which can provide additional phase modulation besides that provided by the free-carrier plasma dispersion...

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Veröffentlicht in:	IEEE photonics technology letters 2015-06, Vol.27 (11), p.1236-1239
Hauptverfasser:	Zhu, Shiyang, Lo, Guo-Qiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride CMOS compatibility Dielectrics Dispersions electro-optic materials Electrooptic modulators Gates III-V semiconductor materials integrated optics devices Logic gates Modulation Modulators Optical waveguides Oxides Silicon Waveguide modulators
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