Direct-gap photoluminescence from germanium nanowires

We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an ap...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035306
Hauptverfasser:	Kawamura, Yoko, Huang, Kevin C. Y., Thombare, Shruti V., Hu, Shu, Gunji, Marika, Ishikawa, Toyofumi, Brongersma, Mark L., Itoh, Kohei M., McIntyre, Paul C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter Crystal structure Lasers Nanowires Photoluminescence Red shift Silicon substrates Wire
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!