Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 201408
Hauptverfasser: Fallahazad, Babak, Hao, Yufeng, Lee, Kayoung, Kim, Seyoung, Ruoff, R. S., Tutuc, E.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 20
container_start_page
container_title Physical review. B, Condensed matter and materials physics
container_volume 85
creator Fallahazad, Babak
Hao, Yufeng
Lee, Kayoung
Kim, Seyoung
Ruoff, R. S.
Tutuc, E.
description We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors [nu] = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bi layers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.
doi_str_mv 10.1103/PhysRevB.85.201408
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1701120332</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1701120332</sourcerecordid><originalsourceid>FETCH-LOGICAL-c390t-b50191716a62af6bb9d170c400270af31e95f9f9683994e249fad5fae4ab70b33</originalsourceid><addsrcrecordid>eNo1kMtOwzAQRSMEEqXwA6y8ZJMytvPyEiqgSJV4CCR21iQZ09DECXbSKn9PUGE1Z3HmLk4QXHJYcA7y-nkz-lfa3S6yeCGAR5AdBTMexxAKGX8cTwwqC4ELfhqcef8Fk6MiMQu2LwPafmjYCuuakTFU9Kyy7JacxZr5HostlQxtyfp95fuJ86rGkRz7dNhtyNIE7d6y1rLlwPKRFRtqqmJ63mHXOlZS1_qqr1p7HpwYrD1d_N158H5_97Zcheunh8flzTospII-zGPgiqc8wUSgSfJclTyFIgIQKaCRnFRslFFJJpWKSETKYBkbpAjzFHIp58HVYbdz7fdAvtdN5Quqa7TUDl5Pa5wLkFJMqjiohWu9d2R056oG3ag56N-y-r-szmJ9KCt_AAIHbtQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1701120332</pqid></control><display><type>article</type><title>Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition</title><source>American Physical Society Journals</source><creator>Fallahazad, Babak ; Hao, Yufeng ; Lee, Kayoung ; Kim, Seyoung ; Ruoff, R. S. ; Tutuc, E.</creator><creatorcontrib>Fallahazad, Babak ; Hao, Yufeng ; Lee, Kayoung ; Kim, Seyoung ; Ruoff, R. S. ; Tutuc, E.</creatorcontrib><description>We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors [nu] = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bi layers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.85.201408</identifier><language>eng</language><subject>CAPACITANCE ; CHEMICAL VAPOR DEPOSITION ; Condensed matter ; Copper ; DEPOSITION ; Gates ; Graphene ; INTERLAYERS ; MICA ; Oscillations ; Quantum Hall effect ; Two dimensional ; VAPOR DEPOSITION</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 201408</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-b50191716a62af6bb9d170c400270af31e95f9f9683994e249fad5fae4ab70b33</citedby><cites>FETCH-LOGICAL-c390t-b50191716a62af6bb9d170c400270af31e95f9f9683994e249fad5fae4ab70b33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids></links><search><creatorcontrib>Fallahazad, Babak</creatorcontrib><creatorcontrib>Hao, Yufeng</creatorcontrib><creatorcontrib>Lee, Kayoung</creatorcontrib><creatorcontrib>Kim, Seyoung</creatorcontrib><creatorcontrib>Ruoff, R. S.</creatorcontrib><creatorcontrib>Tutuc, E.</creatorcontrib><title>Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition</title><title>Physical review. B, Condensed matter and materials physics</title><description>We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors [nu] = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bi layers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.</description><subject>CAPACITANCE</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Condensed matter</subject><subject>Copper</subject><subject>DEPOSITION</subject><subject>Gates</subject><subject>Graphene</subject><subject>INTERLAYERS</subject><subject>MICA</subject><subject>Oscillations</subject><subject>Quantum Hall effect</subject><subject>Two dimensional</subject><subject>VAPOR DEPOSITION</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo1kMtOwzAQRSMEEqXwA6y8ZJMytvPyEiqgSJV4CCR21iQZ09DECXbSKn9PUGE1Z3HmLk4QXHJYcA7y-nkz-lfa3S6yeCGAR5AdBTMexxAKGX8cTwwqC4ELfhqcef8Fk6MiMQu2LwPafmjYCuuakTFU9Kyy7JacxZr5HostlQxtyfp95fuJ86rGkRz7dNhtyNIE7d6y1rLlwPKRFRtqqmJ63mHXOlZS1_qqr1p7HpwYrD1d_N158H5_97Zcheunh8flzTospII-zGPgiqc8wUSgSfJclTyFIgIQKaCRnFRslFFJJpWKSETKYBkbpAjzFHIp58HVYbdz7fdAvtdN5Quqa7TUDl5Pa5wLkFJMqjiohWu9d2R056oG3ag56N-y-r-szmJ9KCt_AAIHbtQ</recordid><startdate>20120518</startdate><enddate>20120518</enddate><creator>Fallahazad, Babak</creator><creator>Hao, Yufeng</creator><creator>Lee, Kayoung</creator><creator>Kim, Seyoung</creator><creator>Ruoff, R. S.</creator><creator>Tutuc, E.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120518</creationdate><title>Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition</title><author>Fallahazad, Babak ; Hao, Yufeng ; Lee, Kayoung ; Kim, Seyoung ; Ruoff, R. S. ; Tutuc, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-b50191716a62af6bb9d170c400270af31e95f9f9683994e249fad5fae4ab70b33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>CAPACITANCE</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Condensed matter</topic><topic>Copper</topic><topic>DEPOSITION</topic><topic>Gates</topic><topic>Graphene</topic><topic>INTERLAYERS</topic><topic>MICA</topic><topic>Oscillations</topic><topic>Quantum Hall effect</topic><topic>Two dimensional</topic><topic>VAPOR DEPOSITION</topic><toplevel>online_resources</toplevel><creatorcontrib>Fallahazad, Babak</creatorcontrib><creatorcontrib>Hao, Yufeng</creatorcontrib><creatorcontrib>Lee, Kayoung</creatorcontrib><creatorcontrib>Kim, Seyoung</creatorcontrib><creatorcontrib>Ruoff, R. S.</creatorcontrib><creatorcontrib>Tutuc, E.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fallahazad, Babak</au><au>Hao, Yufeng</au><au>Lee, Kayoung</au><au>Kim, Seyoung</au><au>Ruoff, R. S.</au><au>Tutuc, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2012-05-18</date><risdate>2012</risdate><volume>85</volume><issue>20</issue><artnum>201408</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors [nu] = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bi layers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance.</abstract><doi>10.1103/PhysRevB.85.201408</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1098-0121
ispartof Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 201408
issn 1098-0121
1550-235X
language eng
recordid cdi_proquest_miscellaneous_1701120332
source American Physical Society Journals
subjects CAPACITANCE
CHEMICAL VAPOR DEPOSITION
Condensed matter
Copper
DEPOSITION
Gates
Graphene
INTERLAYERS
MICA
Oscillations
Quantum Hall effect
Two dimensional
VAPOR DEPOSITION
title Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T18%3A11%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantum%20Hall%20effect%20in%20Bernal%20stacked%20and%20twisted%20bilayer%20graphene%20grown%20on%20Cu%20by%20chemical%20vapor%20deposition&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Fallahazad,%20Babak&rft.date=2012-05-18&rft.volume=85&rft.issue=20&rft.artnum=201408&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.85.201408&rft_dat=%3Cproquest_cross%3E1701120332%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1701120332&rft_id=info:pmid/&rfr_iscdi=true