Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a w...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 201408 |
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creator | Fallahazad, Babak Hao, Yufeng Lee, Kayoung Kim, Seyoung Ruoff, R. S. Tutuc, E. |
description | We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors [nu] = 4, 8, 12, consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bi layers provides the carrier density in each layer as a function of the gate bias and the interlayer capacitance. |
doi_str_mv | 10.1103/PhysRevB.85.201408 |
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subjects | CAPACITANCE CHEMICAL VAPOR DEPOSITION Condensed matter Copper DEPOSITION Gates Graphene INTERLAYERS MICA Oscillations Quantum Hall effect Two dimensional VAPOR DEPOSITION |
title | Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition |
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