Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films
A comparative study of etch characteristics of the InGaZnO4 (IGZO) films has been performed in chlorine- (Cl2 and BCl3) and fluorine-based (CF4 and SF6) inductively coupled plasmas (ICPs). Higher IGZO etch rates were achieved with chlorine-based discharges due to the higher volatility of metal chlor...
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| Veröffentlicht in: | Thin solid films 2013-11, Vol.546, p.136-140 |
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| creator | Park, Jong Cheon Jeong, Ok Geun Kim, Jin Kon Yun, Young-Hoon Pearton, Stephen J. Cho, Hyun |
| description | A comparative study of etch characteristics of the InGaZnO4 (IGZO) films has been performed in chlorine- (Cl2 and BCl3) and fluorine-based (CF4 and SF6) inductively coupled plasmas (ICPs). Higher IGZO etch rates were achieved with chlorine-based discharges due to the higher volatility of metal chloride etch products. The IGZO etch rate was significantly affected by ICP source power and rf chuck power, and maximum etch rates of ~1200Å/min and ~1350Å/min were obtained in fluorine-based and Cl2/Ar discharges, respectively. The etched surface morphologies of IGZO in 10BCl3/5Ar mixtures were better than the unetched control sample. Maximum etch selectivities of 1.4:1 for IGZO over HfO2, 3.1:1 for IGZO over Al2O3, and 1.2:1 for IGZO over yttria-stabilized zirconia were obtained.
•InGaZnO4 etch characteristics in chlorine- and fluorine-based plasmas were compared.•Cl2/Ar discharges produced a maximum etch rate of ~1350Å/min.•10BCl3/5Ar mixtures provided better surface morphology than the unetched sample.•Maximum etch selectivity of 3.1:1 for InGaZnO4 over Al2O3 was obtained. |
| doi_str_mv | 10.1016/j.tsf.2013.05.031 |
| format | Article |
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•InGaZnO4 etch characteristics in chlorine- and fluorine-based plasmas were compared.•Cl2/Ar discharges produced a maximum etch rate of ~1350Å/min.•10BCl3/5Ar mixtures provided better surface morphology than the unetched sample.•Maximum etch selectivity of 3.1:1 for InGaZnO4 over Al2O3 was obtained.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2013.05.031</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aluminum oxide ; Chlorine-based discharges ; Chucks ; Condensed matter: structure, mechanical and thermal properties ; Discharges for spectral sources (including inductively coupled plasmas) ; Dry etching ; Electric discharges ; Etch characteristics ; Etch rate ; Etch selectivity ; Etching ; Etching (metallography) ; Exact sciences and technology ; Fluorine-based discharges ; Hafnium oxide ; IGZO ; Inductively coupled plasma ; Inductively coupled plasmas ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Volatility ; Yttria stabilized zirconia</subject><ispartof>Thin solid films, 2013-11, Vol.546, p.136-140</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-15a689f500d47ffc9070d17c94da58827824990b625c22ab2a8a5af5fcd8151c3</citedby><cites>FETCH-LOGICAL-c360t-15a689f500d47ffc9070d17c94da58827824990b625c22ab2a8a5af5fcd8151c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2013.05.031$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,3539,23917,23918,25127,27911,27912,45982</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27875237$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Jong Cheon</creatorcontrib><creatorcontrib>Jeong, Ok Geun</creatorcontrib><creatorcontrib>Kim, Jin Kon</creatorcontrib><creatorcontrib>Yun, Young-Hoon</creatorcontrib><creatorcontrib>Pearton, Stephen J.</creatorcontrib><creatorcontrib>Cho, Hyun</creatorcontrib><title>Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films</title><title>Thin solid films</title><description>A comparative study of etch characteristics of the InGaZnO4 (IGZO) films has been performed in chlorine- (Cl2 and BCl3) and fluorine-based (CF4 and SF6) inductively coupled plasmas (ICPs). Higher IGZO etch rates were achieved with chlorine-based discharges due to the higher volatility of metal chloride etch products. The IGZO etch rate was significantly affected by ICP source power and rf chuck power, and maximum etch rates of ~1200Å/min and ~1350Å/min were obtained in fluorine-based and Cl2/Ar discharges, respectively. The etched surface morphologies of IGZO in 10BCl3/5Ar mixtures were better than the unetched control sample. Maximum etch selectivities of 1.4:1 for IGZO over HfO2, 3.1:1 for IGZO over Al2O3, and 1.2:1 for IGZO over yttria-stabilized zirconia were obtained.
•InGaZnO4 etch characteristics in chlorine- and fluorine-based plasmas were compared.•Cl2/Ar discharges produced a maximum etch rate of ~1350Å/min.•10BCl3/5Ar mixtures provided better surface morphology than the unetched sample.•Maximum etch selectivity of 3.1:1 for InGaZnO4 over Al2O3 was obtained.</description><subject>Aluminum oxide</subject><subject>Chlorine-based discharges</subject><subject>Chucks</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Discharges for spectral sources (including inductively coupled plasmas)</subject><subject>Dry etching</subject><subject>Electric discharges</subject><subject>Etch characteristics</subject><subject>Etch rate</subject><subject>Etch selectivity</subject><subject>Etching</subject><subject>Etching (metallography)</subject><subject>Exact sciences and technology</subject><subject>Fluorine-based discharges</subject><subject>Hafnium oxide</subject><subject>IGZO</subject><subject>Inductively coupled plasma</subject><subject>Inductively coupled plasmas</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Volatility</subject><subject>Yttria stabilized zirconia</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE-LFDEQxYMoOK5-AG-5CF66t5LudNJ4kkHXhYW9rBcvoSZ_nAzppE26F-bb28MsHj0VVbz3qupHyEcGLQM23J7apfqWA-taEC107BXZMSXHhsuOvSY7gB6aAUZ4S97VegIAxnm3I8d9nmYsoeZEs6fmGHMJyTUUk6U-rtfugNVZGpJdzRKeXTxTk9c5brM5Yp2wUp8LteVM3WKOIf2-ZN2nO_yVHnvqQ5zqe_LGY6zuw0u9IT-_f3va_2geHu_u918fGtMNsDRM4KBGLwBsL703I0iwTJqxtyiU4lLxfhzhMHBhOMcDR4UCvfDGKiaY6W7I52vuXPKf1dVFT6EaFyMml9eqmQQGqpNCbVJ2lZqSay3O67mECctZM9AXqvqkN6r6QlWD0BvVzfPpJR6rwegLJhPqP-N2nxS8k5vuy1Xntl-fgyu6muCScTYUZxZtc_jPlr-YE4zh</recordid><startdate>20131101</startdate><enddate>20131101</enddate><creator>Park, Jong Cheon</creator><creator>Jeong, Ok Geun</creator><creator>Kim, Jin Kon</creator><creator>Yun, Young-Hoon</creator><creator>Pearton, Stephen J.</creator><creator>Cho, Hyun</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131101</creationdate><title>Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films</title><author>Park, Jong Cheon ; Jeong, Ok Geun ; Kim, Jin Kon ; Yun, Young-Hoon ; Pearton, Stephen J. ; Cho, Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-15a689f500d47ffc9070d17c94da58827824990b625c22ab2a8a5af5fcd8151c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum oxide</topic><topic>Chlorine-based discharges</topic><topic>Chucks</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Discharges for spectral sources (including inductively coupled plasmas)</topic><topic>Dry etching</topic><topic>Electric discharges</topic><topic>Etch characteristics</topic><topic>Etch rate</topic><topic>Etch selectivity</topic><topic>Etching</topic><topic>Etching (metallography)</topic><topic>Exact sciences and technology</topic><topic>Fluorine-based discharges</topic><topic>Hafnium oxide</topic><topic>IGZO</topic><topic>Inductively coupled plasma</topic><topic>Inductively coupled plasmas</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Volatility</topic><topic>Yttria stabilized zirconia</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Jong Cheon</creatorcontrib><creatorcontrib>Jeong, Ok Geun</creatorcontrib><creatorcontrib>Kim, Jin Kon</creatorcontrib><creatorcontrib>Yun, Young-Hoon</creatorcontrib><creatorcontrib>Pearton, Stephen J.</creatorcontrib><creatorcontrib>Cho, Hyun</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Jong Cheon</au><au>Jeong, Ok Geun</au><au>Kim, Jin Kon</au><au>Yun, Young-Hoon</au><au>Pearton, Stephen J.</au><au>Cho, Hyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films</atitle><jtitle>Thin solid films</jtitle><date>2013-11-01</date><risdate>2013</risdate><volume>546</volume><spage>136</spage><epage>140</epage><pages>136-140</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>A comparative study of etch characteristics of the InGaZnO4 (IGZO) films has been performed in chlorine- (Cl2 and BCl3) and fluorine-based (CF4 and SF6) inductively coupled plasmas (ICPs). Higher IGZO etch rates were achieved with chlorine-based discharges due to the higher volatility of metal chloride etch products. The IGZO etch rate was significantly affected by ICP source power and rf chuck power, and maximum etch rates of ~1200Å/min and ~1350Å/min were obtained in fluorine-based and Cl2/Ar discharges, respectively. The etched surface morphologies of IGZO in 10BCl3/5Ar mixtures were better than the unetched control sample. Maximum etch selectivities of 1.4:1 for IGZO over HfO2, 3.1:1 for IGZO over Al2O3, and 1.2:1 for IGZO over yttria-stabilized zirconia were obtained.
•InGaZnO4 etch characteristics in chlorine- and fluorine-based plasmas were compared.•Cl2/Ar discharges produced a maximum etch rate of ~1350Å/min.•10BCl3/5Ar mixtures provided better surface morphology than the unetched sample.•Maximum etch selectivity of 3.1:1 for InGaZnO4 over Al2O3 was obtained.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2013.05.031</doi><tpages>5</tpages></addata></record> |
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| subjects | Aluminum oxide Chlorine-based discharges Chucks Condensed matter: structure, mechanical and thermal properties Discharges for spectral sources (including inductively coupled plasmas) Dry etching Electric discharges Etch characteristics Etch rate Etch selectivity Etching Etching (metallography) Exact sciences and technology Fluorine-based discharges Hafnium oxide IGZO Inductively coupled plasma Inductively coupled plasmas Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Volatility Yttria stabilized zirconia |
| title | Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films |
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