Trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium as a single-source metal precursor for the atomic layer deposition of ZrxSi1-xO4

Zr Silicate (ZrxSi1-xO4) films with a cation ratio of Zr:Si=3:1 were deposited by atomic layer deposition (ALD) using trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium (SCTDMAZ) and ozone as a single-source metal precursor and oxidant, respectively. The resultant films showed low residual...

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Veröffentlicht in:Thin solid films 2014-08, Vol.564, p.140-145
Hauptverfasser: Chung, Yoon Jang, Moon, Dae-Chul, Han, Jeong Hwan, Park, Mira, Park, Jung Woo, Chung, Taek-Mo, Lee, Young Kuk, An, Ki Seok
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Sprache:eng
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Zusammenfassung:Zr Silicate (ZrxSi1-xO4) films with a cation ratio of Zr:Si=3:1 were deposited by atomic layer deposition (ALD) using trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium (SCTDMAZ) and ozone as a single-source metal precursor and oxidant, respectively. The resultant films showed low residual impurity concentration as well as excellent conformality over complex structures, implying that the growth is controlled by a surface-limited reaction and hence proper ALD growth behavior. The Zr-silicate films exhibited amorphous characteristics as deposited and after post-deposition annealing (PDA) up to temperatures of 800°C. After PDA the electrical properties of the amorphous Zr-silicate showed standard output values in the metal–insulator–semiconductor structure, with a low hysteresis of 0.04V and moderate dielectric constant of ~10. Accordingly, these experimental results suggest that SCTDMAZ is indeed a viable option as a single-source metal precursor for the ALD of Zr-silicate thin films. •Single source bimetal precursor for the atomic layer deposition (ALD) of Zr silicate•Characteristic ALD behavior was observed when using the precursor.•The resultant films show typical aspects found in Zr silicate films.•The precursor can easily be prepared by conventionally available chemicals.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.05.059