Fast and efficient silicon thermo-optic switching based on reverse breakdown of pn junction

We propose and demonstrate a fast and efficient silicon thermo-optic switch based on reverse breakdown of the pn junction. Benefiting from the direct heating of silicon waveguide by embedding the pn junction into the waveguide center, fast switching with on/off time of 330 and 450 ns and efficient t...

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Veröffentlicht in:Optics letters 2014-02, Vol.39 (4), p.751-753
Hauptverfasser: Li, Xianyao, Xu, Hao, Xiao, Xi, Li, Zhiyong, Yu, Yude, Yu, Jinzhong
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container_end_page 753
container_issue 4
container_start_page 751
container_title Optics letters
container_volume 39
creator Li, Xianyao
Xu, Hao
Xiao, Xi
Li, Zhiyong
Yu, Yude
Yu, Jinzhong
description We propose and demonstrate a fast and efficient silicon thermo-optic switch based on reverse breakdown of the pn junction. Benefiting from the direct heating of silicon waveguide by embedding the pn junction into the waveguide center, fast switching with on/off time of 330 and 450 ns and efficient thermal tuning of 0.12  nm/mW for a 20 μm radius microring resonator are achieved, indicating a high figure of merit of only 8.8  mW·μs. The results here show great potential for application in the future optical interconnects.
doi_str_mv 10.1364/OL.39.000751
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source Optica Publishing Group Journals
subjects Breakdown
Heating
Optical interconnects
PN junctions
Silicon
Switches
Switching
Tuning
Waveguides
title Fast and efficient silicon thermo-optic switching based on reverse breakdown of pn junction
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