CuSbS sub(2)-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Metal-Thiourea Complex Solution

The device performance of sensitizer-architecture solar cells based on a CuSbS sub(2) light sensitizer is presented. The device consists of F-doped SnO sub(2) substrate/TiO sub(2) blocking layer/mesoporous TiO sub(2)/CuSbS sub(2)/hole-tran sporting material/Au electrode. The CuSbS sub(2) was deposited by repeated cycles of spin coating of a Cu-Sb-thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 degree C. Poly(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1 -b; 3,4-b']dithiophene)-alt- 4,7(2,1,3-benzothiadiazole)) (PCPDTBT) was used as the hole-transporting material. The best-performing cell exhibited a 3.1% device efficiency, with a short-circuit current density of 21.5mAcm super(-2), an open-circuit voltage of 304mV, and a fill factor of 46.8%. Ternary CuSbS sub(2)-sensitized inorganic-organic heterojunction solar cells can be assembled with an efficiency of 3.12%. The CuSbS sub(2) is simply deposited on a F-doped SnO sub(2) substrate/TiO sub(2) blocking layer/mesoporous TiO sub(2)/CuSbS sub(2)/hole-tran sporting material (HTM)/Au electrode by processing with a Cu-Sb-thiourea complex (yellow solution in picture). The highest photocurrent is 21.5mAcm super(-2) under standard AM1.5G conditions.