Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration
We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at...
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| Veröffentlicht in: | Optics letters 2014-04, Vol.39 (8), p.2310-2313 |
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| container_title | Optics letters |
| container_volume | 39 |
| creator | Kim, Gyungock Park, Jeong Woo Kim, In Gyoo Kim, Sanghoon Jang, Ki-Seok Kim, Sun Ae Oh, Jin Hyuk Joo, Jiho Kim, Sanggi |
| description | We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration. |
| doi_str_mv | 10.1364/OL.39.002310 |
| format | Article |
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The fabricated device with a 100 μm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.39.002310</identifier><identifier>PMID: 24978980</identifier><language>eng</language><publisher>United States</publisher><subject>CMOS ; Contact ; Depletion ; Dipping ; Lithography ; Modulators ; Noise levels ; Phase shifters ; Silicon</subject><ispartof>Optics letters, 2014-04, Vol.39 (8), p.2310-2313</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-6e25b47b685858c800eeaa0bf05b47be160dd3328c0263d3663b4513fdf03ee53</citedby><cites>FETCH-LOGICAL-c390t-6e25b47b685858c800eeaa0bf05b47be160dd3328c0263d3663b4513fdf03ee53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,3245,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24978980$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Gyungock</creatorcontrib><creatorcontrib>Park, Jeong Woo</creatorcontrib><creatorcontrib>Kim, In Gyoo</creatorcontrib><creatorcontrib>Kim, Sanghoon</creatorcontrib><creatorcontrib>Jang, Ki-Seok</creatorcontrib><creatorcontrib>Kim, Sun Ae</creatorcontrib><creatorcontrib>Oh, Jin Hyuk</creatorcontrib><creatorcontrib>Joo, Jiho</creatorcontrib><creatorcontrib>Kim, Sanggi</creatorcontrib><title>Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration</title><title>Optics letters</title><addtitle>Opt Lett</addtitle><description>We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration.</description><subject>CMOS</subject><subject>Contact</subject><subject>Depletion</subject><subject>Dipping</subject><subject>Lithography</subject><subject>Modulators</subject><subject>Noise levels</subject><subject>Phase shifters</subject><subject>Silicon</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkT2P1DAQhi0E4paDjhq5pMDLOJM4SYlWx4e0aBtoaCLHHl98cj6wk5OWX8NPJfsBLXIx1swzj0Z6GXstYStR5e8P-y3WW4AMJTxhG1lgLfKyzp-yDchcibqosxv2IqUHAFAl4nN2k-V1WdUVbNjv3dhP2swi-V9keefvO9GPdgl69uMgyDlvPA3myJMP3owD_6pNJ35QN1iK_IqOkbc6rfvrXPNHirM3OoQjt36a1ralKdBJyB-WwZw_U7cu8NR5N68etxpM5ycR6JEC98NM9_F8wkv2zOmQ6NW13rLvH---7T6L_eHTl92HvTBYwywUZUWbl62qivWZCoBIa2gdnNskFViLmFUGMoUWlcI2LyQ66wCJCrxlby_eKY4_F0pz0_tkKAQ90LikRpYgAasK4f9okWcIUMIJfXdBTRxTiuSaKfpex2MjoTnF1xz2DdbNJb4Vf3M1L21P9h_8Ny_8AxzGmFg</recordid><startdate>20140415</startdate><enddate>20140415</enddate><creator>Kim, Gyungock</creator><creator>Park, Jeong Woo</creator><creator>Kim, In Gyoo</creator><creator>Kim, Sanghoon</creator><creator>Jang, Ki-Seok</creator><creator>Kim, Sun Ae</creator><creator>Oh, Jin Hyuk</creator><creator>Joo, Jiho</creator><creator>Kim, Sanggi</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140415</creationdate><title>Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration</title><author>Kim, Gyungock ; Park, Jeong Woo ; Kim, In Gyoo ; Kim, Sanghoon ; Jang, Ki-Seok ; Kim, Sun Ae ; Oh, Jin Hyuk ; Joo, Jiho ; Kim, Sanggi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-6e25b47b685858c800eeaa0bf05b47be160dd3328c0263d3663b4513fdf03ee53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CMOS</topic><topic>Contact</topic><topic>Depletion</topic><topic>Dipping</topic><topic>Lithography</topic><topic>Modulators</topic><topic>Noise levels</topic><topic>Phase shifters</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Gyungock</creatorcontrib><creatorcontrib>Park, Jeong Woo</creatorcontrib><creatorcontrib>Kim, In Gyoo</creatorcontrib><creatorcontrib>Kim, Sanghoon</creatorcontrib><creatorcontrib>Jang, Ki-Seok</creatorcontrib><creatorcontrib>Kim, Sun Ae</creatorcontrib><creatorcontrib>Oh, Jin Hyuk</creatorcontrib><creatorcontrib>Joo, Jiho</creatorcontrib><creatorcontrib>Kim, Sanggi</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Gyungock</au><au>Park, Jeong Woo</au><au>Kim, In Gyoo</au><au>Kim, Sanghoon</au><au>Jang, Ki-Seok</au><au>Kim, Sun Ae</au><au>Oh, Jin Hyuk</au><au>Joo, Jiho</au><au>Kim, Sanggi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration</atitle><jtitle>Optics letters</jtitle><addtitle>Opt Lett</addtitle><date>2014-04-15</date><risdate>2014</risdate><volume>39</volume><issue>8</issue><spage>2310</spage><epage>2313</epage><pages>2310-2313</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 μm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 μm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration.</abstract><cop>United States</cop><pmid>24978980</pmid><doi>10.1364/OL.39.002310</doi><tpages>4</tpages></addata></record> |
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| ispartof | Optics letters, 2014-04, Vol.39 (8), p.2310-2313 |
| issn | 0146-9592 1539-4794 |
| language | eng |
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| source | Optica Publishing Group Journals |
| subjects | CMOS Contact Depletion Dipping Lithography Modulators Noise levels Phase shifters Silicon |
| title | Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration |
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