Electric-field-induced shift of the Mott metal-insulator transition in thin films

The ground-state properties of a paramagnetic Mott insulator at half-filling are investigated in the presence of an external electric field using the inhomogeneous Gutzwiller approximation for a single-band Hubbard model in a slab geometry. We find that the metal-insulator transition is shifted towa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-02, Vol.85 (8), Article 085110
Hauptverfasser: Nasr Esfahani, D., Covaci, L., Peeters, F. M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!