Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work...

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Veröffentlicht in:Energy & environmental science 2013-07, Vol.6 (7), p.2112-2118
Hauptverfasser: Lee, Yun Seog, Heo, Jaeyeong, Siah, Sin Cheng, Mailoa, Jonathan P, Brandt, Riley E, Kim, Sang Bok, Gordon, Roy G, Buonassisi, Tonio
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container_end_page 2118
container_issue 7
container_start_page 2112
container_title Energy & environmental science
container_volume 6
creator Lee, Yun Seog
Heo, Jaeyeong
Siah, Sin Cheng
Mailoa, Jonathan P
Brandt, Riley E
Kim, Sang Bok
Gordon, Roy G
Buonassisi, Tonio
description We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.
doi_str_mv 10.1039/c3ee24461j
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source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
subjects Buffer layers
Electric potential
Heterojunctions
Metal oxides
Performance enhancement
Photovoltaic cells
Solar cells
Voltage
title Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
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