Interstitial iron impurities at grain boundaries in silicon: A first-principles study

Iron impurities have a negative effect on the efficiency of silicon-based solar cells because they act as trapping centers for charge carriers. Various processing techniques have been applied to improve the efficiency by passivating the Fe contaminants. For instance, internal gettering exploits the...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-01, Vol.91 (3), Article 035309
Hauptverfasser:	Ziebarth, Benedikt, Mrovec, Matous, Elsässer, Christian, Gumbsch, Peter
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic structure Condensed matter Diffusion Grain boundaries Impurities Interstitials Iron Segregations Silicon
Online-Zugang:	Volltext
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