Preparation and properties of Mg0.2Zn0.8O:Al UV transparent conducting thin films deposited by RF magnetron sputtering at room temperature with rapid annealing

Mg 0.2 Zn 0.8 O:Al UV transparent conducting thin films were deposited by RF magnetron sputtering at room temperature with a rapid annealing process. Effects of sputtering power, argon gas pressure and annealing temperature on structure, optical and electrical properties of Mg 0.2 Zn 0.8 O:Al films...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2012, Vol.23 (2), p.403-407
Hauptverfasser:	Wang, Hua, Huang, Zhu, Xu, Ji-wen, Yang, Ling, Zhou, Shang-ju
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Argon Characterization and Evaluation of Materials Chemistry and Materials Science Deposition Electric power generation Gas pressure Magnetron sputtering Materials Science Optical and Electronic Materials Sputtering Thin films
Online-Zugang:	Volltext
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