Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band - a case study of thermoelectric PbSe

In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped P...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials horizons 2015-01, Vol.2 (3), p.323-329
Hauptverfasser:	Wang, Heng, Cao, Xianlong, Takagiwa, Yoshiki, Snyder, G. Jeffrey
Format:	Artikel
Sprache:	eng
Schlagworte:	Anions Carrier density Cations Conduction band Dopants Origins Semiconductors solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing) Thermoelectricity
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!