Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods
Graphite oxide synthesized with phosphoric acid, labeled “GOP”, shows a higher degree of oxidation and has a larger interlayer spacing than the oxide prepared using the conventional Hummers method, referred to as “GOH”, as confirmed by X-ray photoelectron spectroscopy and X-ray diffraction analyses....
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Veröffentlicht in: | Industrial & engineering chemistry research 2012-08, Vol.51 (30), p.10259-10264 |
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creator | Song, Hoon Sub Ko, Chang Hyun Ahn, Wook Kim, Bae Jung Croiset, Eric Chen, Zhongwei Nam, Sung Chan |
description | Graphite oxide synthesized with phosphoric acid, labeled “GOP”, shows a higher degree of oxidation and has a larger interlayer spacing than the oxide prepared using the conventional Hummers method, referred to as “GOH”, as confirmed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. This study was performed under the assumption that the oxygen-containing functional groups between the GOP layers are more easily reduced than those between the GOH layers. Raman analysis supported this assumption in that the reduced graphene from GOP has a larger number of sp2 carbons and fewer defects than the graphene obtained from GOH. The relative extent of defects in graphene can be investigated by dibenzothiophene (DBT) adsorption, which requires π–π interactions between the free π-bonds of sp2 atoms from graphene and those from the aromatic ring of DBT. The graphene obtained from GOP showed higher DBT adsorption capacity than that synthesized from GOH. In addition, the DBT adsorption capacity on graphene decreased as the concentrations of other aromatic compounds increased. |
doi_str_mv | 10.1021/ie301209c |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1692393944</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1692393944</sourcerecordid><originalsourceid>FETCH-LOGICAL-a322t-33de8d0dc084bc03e4765c504d2c57f0765d5a7b7e2fb1da9ff1e05460850de23</originalsourceid><addsrcrecordid>eNptkE9LAzEQxYMoWKsHv8FeBD2sTrLJ_jmWqlWoKGrPSzaZ2JTtZk22gn56Iy16EQaGGd77MfMIOaVwSYHRK4sZUAaV2iMjKhikArjYJyMoyzIVZSkOyVEIKwAQgvMReX7BFtVgPzC5tg12X25YWtcvscNkooPz_WBdl8SaebldP3nspUedLILt3qLNGPTYDckDDkunwzE5MLINeLLrY7K4vXmd3qXzx9n9dDJPZcbYkGaZxlKDVlDyRkGGvMiFiudqpkRhIE5ayKIpkJmGalkZQxEEz6EUoJFlY3K-5fbevW8wDPXaBoVtKzt0m1DTvGJZlVWcR-nFVqq8C8GjqXtv19J_1hTqn9zq39yi9myHlUHJ1njZKRt-DSxnQCPyTydVqFdu47v47D-8b_P2eRc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1692393944</pqid></control><display><type>article</type><title>Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods</title><source>ACS Publications</source><creator>Song, Hoon Sub ; Ko, Chang Hyun ; Ahn, Wook ; Kim, Bae Jung ; Croiset, Eric ; Chen, Zhongwei ; Nam, Sung Chan</creator><creatorcontrib>Song, Hoon Sub ; Ko, Chang Hyun ; Ahn, Wook ; Kim, Bae Jung ; Croiset, Eric ; Chen, Zhongwei ; Nam, Sung Chan</creatorcontrib><description>Graphite oxide synthesized with phosphoric acid, labeled “GOP”, shows a higher degree of oxidation and has a larger interlayer spacing than the oxide prepared using the conventional Hummers method, referred to as “GOH”, as confirmed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. This study was performed under the assumption that the oxygen-containing functional groups between the GOP layers are more easily reduced than those between the GOH layers. Raman analysis supported this assumption in that the reduced graphene from GOP has a larger number of sp2 carbons and fewer defects than the graphene obtained from GOH. The relative extent of defects in graphene can be investigated by dibenzothiophene (DBT) adsorption, which requires π–π interactions between the free π-bonds of sp2 atoms from graphene and those from the aromatic ring of DBT. The graphene obtained from GOP showed higher DBT adsorption capacity than that synthesized from GOH. In addition, the DBT adsorption capacity on graphene decreased as the concentrations of other aromatic compounds increased.</description><identifier>ISSN: 0888-5885</identifier><identifier>EISSN: 1520-5045</identifier><identifier>DOI: 10.1021/ie301209c</identifier><identifier>CODEN: IECRED</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Adsorption ; Applied sciences ; Aromatic compounds ; Carbon ; Chemical engineering ; Defects ; Dibenzothiophene ; Exact sciences and technology ; Graphene ; Oxides ; X-rays</subject><ispartof>Industrial & engineering chemistry research, 2012-08, Vol.51 (30), p.10259-10264</ispartof><rights>Copyright © 2012 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a322t-33de8d0dc084bc03e4765c504d2c57f0765d5a7b7e2fb1da9ff1e05460850de23</citedby><cites>FETCH-LOGICAL-a322t-33de8d0dc084bc03e4765c504d2c57f0765d5a7b7e2fb1da9ff1e05460850de23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/ie301209c$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/ie301209c$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,777,781,2752,27057,27905,27906,56719,56769</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26201443$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Song, Hoon Sub</creatorcontrib><creatorcontrib>Ko, Chang Hyun</creatorcontrib><creatorcontrib>Ahn, Wook</creatorcontrib><creatorcontrib>Kim, Bae Jung</creatorcontrib><creatorcontrib>Croiset, Eric</creatorcontrib><creatorcontrib>Chen, Zhongwei</creatorcontrib><creatorcontrib>Nam, Sung Chan</creatorcontrib><title>Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods</title><title>Industrial & engineering chemistry research</title><addtitle>Ind. Eng. Chem. Res</addtitle><description>Graphite oxide synthesized with phosphoric acid, labeled “GOP”, shows a higher degree of oxidation and has a larger interlayer spacing than the oxide prepared using the conventional Hummers method, referred to as “GOH”, as confirmed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. This study was performed under the assumption that the oxygen-containing functional groups between the GOP layers are more easily reduced than those between the GOH layers. Raman analysis supported this assumption in that the reduced graphene from GOP has a larger number of sp2 carbons and fewer defects than the graphene obtained from GOH. The relative extent of defects in graphene can be investigated by dibenzothiophene (DBT) adsorption, which requires π–π interactions between the free π-bonds of sp2 atoms from graphene and those from the aromatic ring of DBT. The graphene obtained from GOP showed higher DBT adsorption capacity than that synthesized from GOH. In addition, the DBT adsorption capacity on graphene decreased as the concentrations of other aromatic compounds increased.</description><subject>Adsorption</subject><subject>Applied sciences</subject><subject>Aromatic compounds</subject><subject>Carbon</subject><subject>Chemical engineering</subject><subject>Defects</subject><subject>Dibenzothiophene</subject><subject>Exact sciences and technology</subject><subject>Graphene</subject><subject>Oxides</subject><subject>X-rays</subject><issn>0888-5885</issn><issn>1520-5045</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNptkE9LAzEQxYMoWKsHv8FeBD2sTrLJ_jmWqlWoKGrPSzaZ2JTtZk22gn56Iy16EQaGGd77MfMIOaVwSYHRK4sZUAaV2iMjKhikArjYJyMoyzIVZSkOyVEIKwAQgvMReX7BFtVgPzC5tg12X25YWtcvscNkooPz_WBdl8SaebldP3nspUedLILt3qLNGPTYDckDDkunwzE5MLINeLLrY7K4vXmd3qXzx9n9dDJPZcbYkGaZxlKDVlDyRkGGvMiFiudqpkRhIE5ayKIpkJmGalkZQxEEz6EUoJFlY3K-5fbevW8wDPXaBoVtKzt0m1DTvGJZlVWcR-nFVqq8C8GjqXtv19J_1hTqn9zq39yi9myHlUHJ1njZKRt-DSxnQCPyTydVqFdu47v47D-8b_P2eRc</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>Song, Hoon Sub</creator><creator>Ko, Chang Hyun</creator><creator>Ahn, Wook</creator><creator>Kim, Bae Jung</creator><creator>Croiset, Eric</creator><creator>Chen, Zhongwei</creator><creator>Nam, Sung Chan</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120801</creationdate><title>Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods</title><author>Song, Hoon Sub ; Ko, Chang Hyun ; Ahn, Wook ; Kim, Bae Jung ; Croiset, Eric ; Chen, Zhongwei ; Nam, Sung Chan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a322t-33de8d0dc084bc03e4765c504d2c57f0765d5a7b7e2fb1da9ff1e05460850de23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Adsorption</topic><topic>Applied sciences</topic><topic>Aromatic compounds</topic><topic>Carbon</topic><topic>Chemical engineering</topic><topic>Defects</topic><topic>Dibenzothiophene</topic><topic>Exact sciences and technology</topic><topic>Graphene</topic><topic>Oxides</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Song, Hoon Sub</creatorcontrib><creatorcontrib>Ko, Chang Hyun</creatorcontrib><creatorcontrib>Ahn, Wook</creatorcontrib><creatorcontrib>Kim, Bae Jung</creatorcontrib><creatorcontrib>Croiset, Eric</creatorcontrib><creatorcontrib>Chen, Zhongwei</creatorcontrib><creatorcontrib>Nam, Sung Chan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Industrial & engineering chemistry research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Song, Hoon Sub</au><au>Ko, Chang Hyun</au><au>Ahn, Wook</au><au>Kim, Bae Jung</au><au>Croiset, Eric</au><au>Chen, Zhongwei</au><au>Nam, Sung Chan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods</atitle><jtitle>Industrial & engineering chemistry research</jtitle><addtitle>Ind. Eng. Chem. Res</addtitle><date>2012-08-01</date><risdate>2012</risdate><volume>51</volume><issue>30</issue><spage>10259</spage><epage>10264</epage><pages>10259-10264</pages><issn>0888-5885</issn><eissn>1520-5045</eissn><coden>IECRED</coden><abstract>Graphite oxide synthesized with phosphoric acid, labeled “GOP”, shows a higher degree of oxidation and has a larger interlayer spacing than the oxide prepared using the conventional Hummers method, referred to as “GOH”, as confirmed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. This study was performed under the assumption that the oxygen-containing functional groups between the GOP layers are more easily reduced than those between the GOH layers. Raman analysis supported this assumption in that the reduced graphene from GOP has a larger number of sp2 carbons and fewer defects than the graphene obtained from GOH. The relative extent of defects in graphene can be investigated by dibenzothiophene (DBT) adsorption, which requires π–π interactions between the free π-bonds of sp2 atoms from graphene and those from the aromatic ring of DBT. The graphene obtained from GOP showed higher DBT adsorption capacity than that synthesized from GOH. In addition, the DBT adsorption capacity on graphene decreased as the concentrations of other aromatic compounds increased.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><doi>10.1021/ie301209c</doi><tpages>6</tpages></addata></record> |
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subjects | Adsorption Applied sciences Aromatic compounds Carbon Chemical engineering Defects Dibenzothiophene Exact sciences and technology Graphene Oxides X-rays |
title | Selective Dibenzothiophene Adsorption on Graphene Prepared Using Different Methods |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T06%3A30%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Selective%20Dibenzothiophene%20Adsorption%20on%20Graphene%20Prepared%20Using%20Different%20Methods&rft.jtitle=Industrial%20&%20engineering%20chemistry%20research&rft.au=Song,%20Hoon%20Sub&rft.date=2012-08-01&rft.volume=51&rft.issue=30&rft.spage=10259&rft.epage=10264&rft.pages=10259-10264&rft.issn=0888-5885&rft.eissn=1520-5045&rft.coden=IECRED&rft_id=info:doi/10.1021/ie301209c&rft_dat=%3Cproquest_cross%3E1692393944%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1692393944&rft_id=info:pmid/&rfr_iscdi=true |