Slow Relaxation Processes in CCTO Detected by Capacitance Versus Voltage Curves
The temperature and frequency dependence of capacitance versus voltage (C–V) curves was investigated for ceramic CaCu3Ti4O12 samples sintered in atmospheres of vacuum, air and oxygen, respectively. A drastic capacitance rise at higher dc voltages and low ac frequencies was observed for all these CaC...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2013-01, Vol.96 (1), p.253-258 |
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| container_title | Journal of the American Ceramic Society |
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| creator | Luo, Xiao Jing Yang, Chang Ping Song, Xue Ping Tang, Shao-Long Xiao, Hai-Bo Bärner, Klaus Herrmann Otto |
| description | The temperature and frequency dependence of capacitance versus voltage (C–V) curves was investigated for ceramic CaCu3Ti4O12 samples sintered in atmospheres of vacuum, air and oxygen, respectively. A drastic capacitance rise at higher dc voltages and low ac frequencies was observed for all these CaCu3Ti4O12CCTO samples, and it is especially strong for the sample sintered in vacuum, which has not been found previously. The shape as well as the asymmetry of the C–V curves suggest that the dielectric behavior is related to charged trap states. It also indicates that a slow relaxation process, which is strongly correlated with the re‐positioning of oxygen vacancies related trap charges, takes place in CCTO. The main trap charge relaxation process is thought to occur between the boundaries perpendicular and parallel to the external electric field, and the anisotropy of the defect dipoles provide the possibilities for trap charge repositioning which maybe the reason of the huge dielectric constant. |
| doi_str_mv | 10.1111/jace.12042 |
| format | Article |
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A. ; Varela, J. A.</contributor><creatorcontrib>Luo, Xiao Jing ; Yang, Chang Ping ; Song, Xue Ping ; Tang, Shao-Long ; Xiao, Hai-Bo ; Bärner, Klaus Herrmann Otto ; Varela, J. A. ; Varela, J. A.</creatorcontrib><description>The temperature and frequency dependence of capacitance versus voltage (C–V) curves was investigated for ceramic CaCu3Ti4O12 samples sintered in atmospheres of vacuum, air and oxygen, respectively. A drastic capacitance rise at higher dc voltages and low ac frequencies was observed for all these CaCu3Ti4O12CCTO samples, and it is especially strong for the sample sintered in vacuum, which has not been found previously. The shape as well as the asymmetry of the C–V curves suggest that the dielectric behavior is related to charged trap states. It also indicates that a slow relaxation process, which is strongly correlated with the re‐positioning of oxygen vacancies related trap charges, takes place in CCTO. The main trap charge relaxation process is thought to occur between the boundaries perpendicular and parallel to the external electric field, and the anisotropy of the defect dipoles provide the possibilities for trap charge repositioning which maybe the reason of the huge dielectric constant.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/jace.12042</identifier><identifier>CODEN: JACTAW</identifier><language>eng</language><publisher>Columbus: Blackwell Publishing Ltd</publisher><subject>Anisotropy ; CAPACITANCE ; CERAMICS ; Charge ; Charge (electric) ; COPPER OXIDE ; Correlation analysis ; DIELECTRIC CONSTANT ; Dielectric properties ; Electric charge ; Electric currents ; Electric fields ; Electric potential ; MAGNETIC FIELD ; Oxygen ; SINTERING ; Temperature ; VOLTAGE</subject><ispartof>Journal of the American Ceramic Society, 2013-01, Vol.96 (1), p.253-258</ispartof><rights>2012 The American Ceramic Society</rights><rights>Copyright American Ceramic Society Jan 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4382-4e5a305ab678a0d38de972eba9f0e57dd431a969af41e9d8d03238492ac566483</citedby><cites>FETCH-LOGICAL-c4382-4e5a305ab678a0d38de972eba9f0e57dd431a969af41e9d8d03238492ac566483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1111%2Fjace.12042$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1111%2Fjace.12042$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><contributor>Varela, J. A.</contributor><contributor>Varela, J. A.</contributor><creatorcontrib>Luo, Xiao Jing</creatorcontrib><creatorcontrib>Yang, Chang Ping</creatorcontrib><creatorcontrib>Song, Xue Ping</creatorcontrib><creatorcontrib>Tang, Shao-Long</creatorcontrib><creatorcontrib>Xiao, Hai-Bo</creatorcontrib><creatorcontrib>Bärner, Klaus Herrmann Otto</creatorcontrib><title>Slow Relaxation Processes in CCTO Detected by Capacitance Versus Voltage Curves</title><title>Journal of the American Ceramic Society</title><addtitle>J. Am. Ceram. Soc</addtitle><description>The temperature and frequency dependence of capacitance versus voltage (C–V) curves was investigated for ceramic CaCu3Ti4O12 samples sintered in atmospheres of vacuum, air and oxygen, respectively. A drastic capacitance rise at higher dc voltages and low ac frequencies was observed for all these CaCu3Ti4O12CCTO samples, and it is especially strong for the sample sintered in vacuum, which has not been found previously. The shape as well as the asymmetry of the C–V curves suggest that the dielectric behavior is related to charged trap states. It also indicates that a slow relaxation process, which is strongly correlated with the re‐positioning of oxygen vacancies related trap charges, takes place in CCTO. The main trap charge relaxation process is thought to occur between the boundaries perpendicular and parallel to the external electric field, and the anisotropy of the defect dipoles provide the possibilities for trap charge repositioning which maybe the reason of the huge dielectric constant.</description><subject>Anisotropy</subject><subject>CAPACITANCE</subject><subject>CERAMICS</subject><subject>Charge</subject><subject>Charge (electric)</subject><subject>COPPER OXIDE</subject><subject>Correlation analysis</subject><subject>DIELECTRIC CONSTANT</subject><subject>Dielectric properties</subject><subject>Electric charge</subject><subject>Electric currents</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>MAGNETIC FIELD</subject><subject>Oxygen</subject><subject>SINTERING</subject><subject>Temperature</subject><subject>VOLTAGE</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNkc1v00AQxVcIJELppX_BSlwQkst-e_dYOaUFRaTqJ7fVZD1BDq4ddu22-e-7IdADh6pzGY30e0968wg54OyQ5_m8goCHXDAlXpEJ15oXwnHzmkwYY6IorWBvybuUVvnkzqoJmV-0_T09xxYeYGj6jp7FPmBKmGjT0aq6nNMpDhgGrOliQytYQ2gG6ALSa4xpTPS6bwf4ibQa4x2m9-TNEtqE-3_3Hrn6cnxZnRaz-cnX6mhWBCWtKBRqkEzDwpQWWC1tja4UuAC3ZKjLulaSgzMOloqjq23NpJBWOQFBG6Os3CMfd77r2P8eMQ3-tkkB2xY67MfkuXFC5vzsBWi2FloyyV-Acm1UyViZ0Q__oat-jF3O7LnIqdj2xZn6tKNC7FOKuPTr2NxC3HjO_LYxv23M_2ksw3wH3zctbp4h_bej6vifpthpmjTgw5MG4i9vSllqf_P9xM-m0x9yqq038hHhDKPy</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Luo, Xiao Jing</creator><creator>Yang, Chang Ping</creator><creator>Song, Xue Ping</creator><creator>Tang, Shao-Long</creator><creator>Xiao, Hai-Bo</creator><creator>Bärner, Klaus Herrmann Otto</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>H8G</scope></search><sort><creationdate>201301</creationdate><title>Slow Relaxation Processes in CCTO Detected by Capacitance Versus Voltage Curves</title><author>Luo, Xiao Jing ; Yang, Chang Ping ; Song, Xue Ping ; Tang, Shao-Long ; Xiao, Hai-Bo ; Bärner, Klaus Herrmann Otto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4382-4e5a305ab678a0d38de972eba9f0e57dd431a969af41e9d8d03238492ac566483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Anisotropy</topic><topic>CAPACITANCE</topic><topic>CERAMICS</topic><topic>Charge</topic><topic>Charge (electric)</topic><topic>COPPER OXIDE</topic><topic>Correlation analysis</topic><topic>DIELECTRIC CONSTANT</topic><topic>Dielectric properties</topic><topic>Electric charge</topic><topic>Electric currents</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>MAGNETIC FIELD</topic><topic>Oxygen</topic><topic>SINTERING</topic><topic>Temperature</topic><topic>VOLTAGE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Xiao Jing</creatorcontrib><creatorcontrib>Yang, Chang Ping</creatorcontrib><creatorcontrib>Song, Xue Ping</creatorcontrib><creatorcontrib>Tang, Shao-Long</creatorcontrib><creatorcontrib>Xiao, Hai-Bo</creatorcontrib><creatorcontrib>Bärner, Klaus Herrmann Otto</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Copper Technical Reference Library</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Xiao Jing</au><au>Yang, Chang Ping</au><au>Song, Xue Ping</au><au>Tang, Shao-Long</au><au>Xiao, Hai-Bo</au><au>Bärner, Klaus Herrmann Otto</au><au>Varela, J. A.</au><au>Varela, J. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Slow Relaxation Processes in CCTO Detected by Capacitance Versus Voltage Curves</atitle><jtitle>Journal of the American Ceramic Society</jtitle><addtitle>J. Am. Ceram. Soc</addtitle><date>2013-01</date><risdate>2013</risdate><volume>96</volume><issue>1</issue><spage>253</spage><epage>258</epage><pages>253-258</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><coden>JACTAW</coden><abstract>The temperature and frequency dependence of capacitance versus voltage (C–V) curves was investigated for ceramic CaCu3Ti4O12 samples sintered in atmospheres of vacuum, air and oxygen, respectively. A drastic capacitance rise at higher dc voltages and low ac frequencies was observed for all these CaCu3Ti4O12CCTO samples, and it is especially strong for the sample sintered in vacuum, which has not been found previously. The shape as well as the asymmetry of the C–V curves suggest that the dielectric behavior is related to charged trap states. It also indicates that a slow relaxation process, which is strongly correlated with the re‐positioning of oxygen vacancies related trap charges, takes place in CCTO. The main trap charge relaxation process is thought to occur between the boundaries perpendicular and parallel to the external electric field, and the anisotropy of the defect dipoles provide the possibilities for trap charge repositioning which maybe the reason of the huge dielectric constant.</abstract><cop>Columbus</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/jace.12042</doi><tpages>6</tpages></addata></record> |
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| subjects | Anisotropy CAPACITANCE CERAMICS Charge Charge (electric) COPPER OXIDE Correlation analysis DIELECTRIC CONSTANT Dielectric properties Electric charge Electric currents Electric fields Electric potential MAGNETIC FIELD Oxygen SINTERING Temperature VOLTAGE |
| title | Slow Relaxation Processes in CCTO Detected by Capacitance Versus Voltage Curves |
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