Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition
Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) (LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited elec...
Gespeichert in:
| Veröffentlicht in: | International journal of hydrogen energy 2010-11, Vol.35 (22), p.12443-12448 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 12448 |
|---|---|
| container_issue | 22 |
| container_start_page | 12443 |
| container_title | International journal of hydrogen energy |
| container_volume | 35 |
| creator | Zomorrodian, Ali Salamati, Hadi Lu, Zigui Chen, Xin Wu, Naijuan Ignatiev, Alex |
| description | Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) (LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited electrical conductivities of as high as 2.3 x 10 super(3) S cm super(-1) at 600 C, with an activation energy of 0.09 eV. The surface exchange coefficient (k sub(c)hem) of the epitaxial LSCF thin film, determined by electrical conductivity relaxation (ECR) technique, increased with the increasing temperature, and reached a value of [inline image]5.1 x 10 super(-6) S cm super(-1) at temperatures above 620 C. |
| doi_str_mv | 10.1016/j.ijhydene.2010.08.100 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1692337655</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1692337655</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_16923376553</originalsourceid><addsrcrecordid>eNqVikFOwzAQRb0AqQV6BTTLZpEwjtu0WVetWCB1AfvKTSZ0ItcOtgPkBFybCOUCrP7Te1-IR4mZRFk8tRm3l6EmS1mOo8Tt6PFGzFEVmCpZljNxF0KLKDe4KufiZ2-oip4rbaBytu6ryJ8cB3ANUMdRf_NYXjSE_rzErEhe_YSrZOcmzJMDTbhNjn-k0jqBeGELDZtrgHfvviycB-h6E6gGowN5qKlzgSM7-yBuGz2WxbT3YnnYv-2e0867j55CPF05VGSMtuT6cJJFmSu1KdZr9Y_rLyxPWl4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1692337655</pqid></control><display><type>article</type><title>Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition</title><source>Elsevier ScienceDirect Journals</source><creator>Zomorrodian, Ali ; Salamati, Hadi ; Lu, Zigui ; Chen, Xin ; Wu, Naijuan ; Ignatiev, Alex</creator><creatorcontrib>Zomorrodian, Ali ; Salamati, Hadi ; Lu, Zigui ; Chen, Xin ; Wu, Naijuan ; Ignatiev, Alex</creatorcontrib><description>Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) (LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited electrical conductivities of as high as 2.3 x 10 super(3) S cm super(-1) at 600 C, with an activation energy of 0.09 eV. The surface exchange coefficient (k sub(c)hem) of the epitaxial LSCF thin film, determined by electrical conductivity relaxation (ECR) technique, increased with the increasing temperature, and reached a value of [inline image]5.1 x 10 super(-6) S cm super(-1) at temperatures above 620 C.</description><identifier>ISSN: 0360-3199</identifier><identifier>DOI: 10.1016/j.ijhydene.2010.08.100</identifier><language>eng</language><subject>Deposition ; Electrical conductivity ; Electrical resistivity ; Epitaxial growth ; Micrographs ; Photomicrographs ; Pulsed laser deposition ; Resistivity ; Thin films</subject><ispartof>International journal of hydrogen energy, 2010-11, Vol.35 (22), p.12443-12448</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zomorrodian, Ali</creatorcontrib><creatorcontrib>Salamati, Hadi</creatorcontrib><creatorcontrib>Lu, Zigui</creatorcontrib><creatorcontrib>Chen, Xin</creatorcontrib><creatorcontrib>Wu, Naijuan</creatorcontrib><creatorcontrib>Ignatiev, Alex</creatorcontrib><title>Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition</title><title>International journal of hydrogen energy</title><description>Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) (LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited electrical conductivities of as high as 2.3 x 10 super(3) S cm super(-1) at 600 C, with an activation energy of 0.09 eV. The surface exchange coefficient (k sub(c)hem) of the epitaxial LSCF thin film, determined by electrical conductivity relaxation (ECR) technique, increased with the increasing temperature, and reached a value of [inline image]5.1 x 10 super(-6) S cm super(-1) at temperatures above 620 C.</description><subject>Deposition</subject><subject>Electrical conductivity</subject><subject>Electrical resistivity</subject><subject>Epitaxial growth</subject><subject>Micrographs</subject><subject>Photomicrographs</subject><subject>Pulsed laser deposition</subject><subject>Resistivity</subject><subject>Thin films</subject><issn>0360-3199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqVikFOwzAQRb0AqQV6BTTLZpEwjtu0WVetWCB1AfvKTSZ0ItcOtgPkBFybCOUCrP7Te1-IR4mZRFk8tRm3l6EmS1mOo8Tt6PFGzFEVmCpZljNxF0KLKDe4KufiZ2-oip4rbaBytu6ryJ8cB3ANUMdRf_NYXjSE_rzErEhe_YSrZOcmzJMDTbhNjn-k0jqBeGELDZtrgHfvviycB-h6E6gGowN5qKlzgSM7-yBuGz2WxbT3YnnYv-2e0867j55CPF05VGSMtuT6cJJFmSu1KdZr9Y_rLyxPWl4</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Zomorrodian, Ali</creator><creator>Salamati, Hadi</creator><creator>Lu, Zigui</creator><creator>Chen, Xin</creator><creator>Wu, Naijuan</creator><creator>Ignatiev, Alex</creator><scope>7SP</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20101101</creationdate><title>Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition</title><author>Zomorrodian, Ali ; Salamati, Hadi ; Lu, Zigui ; Chen, Xin ; Wu, Naijuan ; Ignatiev, Alex</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16923376553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Deposition</topic><topic>Electrical conductivity</topic><topic>Electrical resistivity</topic><topic>Epitaxial growth</topic><topic>Micrographs</topic><topic>Photomicrographs</topic><topic>Pulsed laser deposition</topic><topic>Resistivity</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zomorrodian, Ali</creatorcontrib><creatorcontrib>Salamati, Hadi</creatorcontrib><creatorcontrib>Lu, Zigui</creatorcontrib><creatorcontrib>Chen, Xin</creatorcontrib><creatorcontrib>Wu, Naijuan</creatorcontrib><creatorcontrib>Ignatiev, Alex</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>International journal of hydrogen energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zomorrodian, Ali</au><au>Salamati, Hadi</au><au>Lu, Zigui</au><au>Chen, Xin</au><au>Wu, Naijuan</au><au>Ignatiev, Alex</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition</atitle><jtitle>International journal of hydrogen energy</jtitle><date>2010-11-01</date><risdate>2010</risdate><volume>35</volume><issue>22</issue><spage>12443</spage><epage>12448</epage><pages>12443-12448</pages><issn>0360-3199</issn><abstract>Epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) (LSCF) thin films have been grown successfully on single crystal LaAlO sub(3) substrate by pulsed laser deposition (PLD). AFM micrographs have shown a rms roughness of 5Aa for the 550 C deposited films. The films further exhibited electrical conductivities of as high as 2.3 x 10 super(3) S cm super(-1) at 600 C, with an activation energy of 0.09 eV. The surface exchange coefficient (k sub(c)hem) of the epitaxial LSCF thin film, determined by electrical conductivity relaxation (ECR) technique, increased with the increasing temperature, and reached a value of [inline image]5.1 x 10 super(-6) S cm super(-1) at temperatures above 620 C.</abstract><doi>10.1016/j.ijhydene.2010.08.100</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0360-3199 |
| ispartof | International journal of hydrogen energy, 2010-11, Vol.35 (22), p.12443-12448 |
| issn | 0360-3199 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1692337655 |
| source | Elsevier ScienceDirect Journals |
| subjects | Deposition Electrical conductivity Electrical resistivity Epitaxial growth Micrographs Photomicrographs Pulsed laser deposition Resistivity Thin films |
| title | Electrical conductivity of epitaxial La sub(0.6)Sr sub(0.4)Co sub(0.2)Fe sub(0.8)O sub(3-d) thin films grown by pulsed laser deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T13%3A30%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20conductivity%20of%20epitaxial%20La%20sub(0.6)Sr%20sub(0.4)Co%20sub(0.2)Fe%20sub(0.8)O%20sub(3-d)%20thin%20films%20grown%20by%20pulsed%20laser%20deposition&rft.jtitle=International%20journal%20of%20hydrogen%20energy&rft.au=Zomorrodian,%20Ali&rft.date=2010-11-01&rft.volume=35&rft.issue=22&rft.spage=12443&rft.epage=12448&rft.pages=12443-12448&rft.issn=0360-3199&rft_id=info:doi/10.1016/j.ijhydene.2010.08.100&rft_dat=%3Cproquest%3E1692337655%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1692337655&rft_id=info:pmid/&rfr_iscdi=true |