Electrical Properties of Epitaxial 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition

Thin films of 0.65Pb (Mg1/3Nb2/3)O3‐0.35PbTiO3(PMN‐PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom ele...

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Veröffentlicht in:	International journal of applied ceramic technology 2011-11, Vol.8 (6), p.1393-1399
Hauptverfasser:	Jiang, Juan, Hur, Sung-Gi, Yoon, Soon-Gil
Format:	Artikel
Sprache:	eng
Schlagworte:	Ceramics Coercive force Electrical properties Electrodes Epitaxial growth Pulsed laser deposition Roughness Silicon substrates Thin films Yttria stabilized zirconia
Online-Zugang:	Volltext
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