Electrical Properties of Epitaxial 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition

Electrical Properties of Epitaxial 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition

Thin films of 0.65Pb (Mg1/3Nb2/3)O3‐0.35PbTiO3(PMN‐PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom ele...

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Veröffentlicht in:International journal of applied ceramic technology 2011-11, Vol.8 (6), p.1393-1399
Hauptverfasser: Jiang, Juan, Hur, Sung-Gi, Yoon, Soon-Gil
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Sprache:eng
Schlagworte:
Ceramics
Coercive force
Electrical properties
Electrodes
Epitaxial growth
Pulsed laser deposition
Roughness
Silicon substrates
Thin films
Yttria stabilized zirconia
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container_title International journal of applied ceramic technology
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creator Jiang, Juan
Hur, Sung-Gi
Yoon, Soon-Gil
description Thin films of 0.65Pb (Mg1/3Nb2/3)O3‐0.35PbTiO3(PMN‐PT) of thickness 300 nm were grown on Si (001) substrates using conventional pulsed laser deposition (PLD) at substrate temperature in the range of 500°–650°C in oxygen ambient of 300 mTorr. The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO2/YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good P−E (polarization−electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm2 and a coercive field of 33.5 kV/cm was obtained on the PMN‐PT films.
doi_str_mv 10.1111/j.1744-7402.2010.02605.x
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The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO2/YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. 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The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO2/YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. 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The La0.5Sr0.5CoO3−δ (LSCO) thin films (used as bottom electrode) of RMS roughness of approximately 1.7 nm and resistivity of 2100 μΩ‐cm were epitaxially grown on CeO2/YSZ‐buffered Si (001) substrates. The high‐resolution X‐ray diffraction and transmission electron microscopy results show that the PMN‐PT films grown on LSCO/CeO2/YSZ/Si substrates at 550°C exhibit the epitaxial perovskite structure. The PMN‐PT films exhibited a high dielectric constant of about 1631 and a low dissipation factor of 0.06 at a frequency of 10 kHz. A good P−E (polarization−electric field) hysteresis characteristic with remanent polarization of 6.34 μC/cm2 and a coercive field of 33.5 kV/cm was obtained on the PMN‐PT films.</abstract><cop>Malden, USA</cop><pub>Blackwell Publishing Inc</pub><doi>10.1111/j.1744-7402.2010.02605.x</doi><tpages>7</tpages></addata></record>
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source Wiley Blackwell Journals
subjects Ceramics
Coercive force
Electrical properties
Electrodes
Epitaxial growth
Pulsed laser deposition
Roughness
Silicon substrates
Thin films
Yttria stabilized zirconia
title Electrical Properties of Epitaxial 0.65Pb (Mg1/3Nb2/3)O3-0.35PbTiO3 Thin Films Grown on Buffered Si Substrates by Pulsed Laser Deposition
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