Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 a...

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Veröffentlicht in:	Journal of the American Chemical Society 2015-06, Vol.137 (22), p.7051-7054
Hauptverfasser:	Zhang, Mei, Zhu, Yiming, Wang, Xinsheng, Feng, Qingliang, Qiao, Shanlin, Wen, Wen, Chen, Yanfeng, Cui, Menghua, Zhang, Jin, Cai, Congzhong, Xie, Liming
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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