Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride

Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 a...

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Veröffentlicht in:Journal of the American Chemical Society 2015-06, Vol.137 (22), p.7051-7054
Hauptverfasser: Zhang, Mei, Zhu, Yiming, Wang, Xinsheng, Feng, Qingliang, Qiao, Shanlin, Wen, Wen, Chen, Yanfeng, Cui, Menghua, Zhang, Jin, Cai, Congzhong, Xie, Liming
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container_issue 22
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container_title Journal of the American Chemical Society
container_volume 137
creator Zhang, Mei
Zhu, Yiming
Wang, Xinsheng
Feng, Qingliang
Qiao, Shanlin
Wen, Wen
Chen, Yanfeng
Cui, Menghua
Zhang, Jin
Cai, Congzhong
Xie, Liming
description Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1–3 μm. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS2 and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0°. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1–1.1 cm2 V–1 s–1.
doi_str_mv 10.1021/jacs.5b03807
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