Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second

We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W （-85 photons...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Nano research 2015-04, Vol.8 (4), p.1098-1107
Hauptverfasser:	Yu, Yong-Qiang, Luo, Lin-Bao, Wang, Ming-Zheng, Wang, Bo, Zeng, Long-Hui, Wu, Chun-Yan, Jie, Jian-Sheng, Liu, Jian-Wei, Wang, Li, Yu, Shu-Hong
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chemistry and Materials Science Condensed Matter Physics Devices Electrons Indium tin oxide Indium tin oxides Irradiation Materials Science Mathematical analysis Microscopy Nanostructure Nanotechnology Optoelectronic devices Photons Photovoltaics Research Article Temperature Trapping Ultraviolet Ultraviolet radiation 光子通量光电器件增益计算流量界面状态紫外线探测器肖特基势垒二极管超灵敏
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!