Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
An investigation of current--voltage ($I$--$V$) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO 2 /Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2013-06, Vol.52 (6), p.06GF04-06GF04-5 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 06GF04-5 |
|---|---|
| container_issue | 6 |
| container_start_page | 06GF04 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 52 |
| creator | Otsuka, Shintaro Kato, Takashi Kyomi, Takuya Hamada, Yoshifumi Tada, Yoshihiro Shimizu, Tomohiro Shingubara, Shoso |
| description | An investigation of current--voltage ($I$--$V$) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO 2 /Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO 2 /Au device from these results. |
| doi_str_mv | 10.7567/JJAP.52.06GF04 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1686433495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1686433495</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-b7d41e77aaac83533a71af89a8af0aebb2d3bb5bd53bb5c97725c3f7a5d011d13</originalsourceid><addsrcrecordid>eNqFkM9LwzAYhoMoOKdXzzmK0Jo0SdMe52anY6DIvHgpX5OvUO0vk1bZf-9GvXt6eeF538NDyDVnoVaxvttsFi-hikIWrzMmT8iMC6kDyWJ1SmaMRTyQaRSdkwvvPw41VpLPyPsOmx4dDKNDusIeW4utQdqV9BV95Qf4a8uutaMZqm-kWVVDg-1As841aGmxp6sKazSDqwy9dwiftvtpL8lZCbXHq7-ck7fsYbd8DLbP66flYhsYocUQFNpKjloDgEmEEgI0hzJJIYGSARZFZEVRqMKqY5hU60gZUWpQlnFuuZiTm-m3d93XiH7Im8obrGtosRt9zuMklkLIVB3QcEKN67x3WOa9qxpw-5yz_CgxP0rMVZRPEg-D22lQ9dD_B_8C0Fpzfw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1686433495</pqid></control><display><type>article</type><title>Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Otsuka, Shintaro ; Kato, Takashi ; Kyomi, Takuya ; Hamada, Yoshifumi ; Tada, Yoshihiro ; Shimizu, Tomohiro ; Shingubara, Shoso</creator><creatorcontrib>Otsuka, Shintaro ; Kato, Takashi ; Kyomi, Takuya ; Hamada, Yoshifumi ; Tada, Yoshihiro ; Shimizu, Tomohiro ; Shingubara, Shoso</creatorcontrib><description>An investigation of current--voltage ($I$--$V$) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO 2 /Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO 2 /Au device from these results.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.52.06GF04</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Conduction heating ; Copper ; Devices ; Gold ; Scanning electron microscopy ; Silicon dioxide ; Switching ; Temperature dependence</subject><ispartof>Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.06GF04-06GF04-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-b7d41e77aaac83533a71af89a8af0aebb2d3bb5bd53bb5c97725c3f7a5d011d13</citedby><cites>FETCH-LOGICAL-c373t-b7d41e77aaac83533a71af89a8af0aebb2d3bb5bd53bb5c97725c3f7a5d011d13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids></links><search><creatorcontrib>Otsuka, Shintaro</creatorcontrib><creatorcontrib>Kato, Takashi</creatorcontrib><creatorcontrib>Kyomi, Takuya</creatorcontrib><creatorcontrib>Hamada, Yoshifumi</creatorcontrib><creatorcontrib>Tada, Yoshihiro</creatorcontrib><creatorcontrib>Shimizu, Tomohiro</creatorcontrib><creatorcontrib>Shingubara, Shoso</creatorcontrib><title>Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown</title><title>Japanese Journal of Applied Physics</title><description>An investigation of current--voltage ($I$--$V$) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO 2 /Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO 2 /Au device from these results.</description><subject>Conduction heating</subject><subject>Copper</subject><subject>Devices</subject><subject>Gold</subject><subject>Scanning electron microscopy</subject><subject>Silicon dioxide</subject><subject>Switching</subject><subject>Temperature dependence</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkM9LwzAYhoMoOKdXzzmK0Jo0SdMe52anY6DIvHgpX5OvUO0vk1bZf-9GvXt6eeF538NDyDVnoVaxvttsFi-hikIWrzMmT8iMC6kDyWJ1SmaMRTyQaRSdkwvvPw41VpLPyPsOmx4dDKNDusIeW4utQdqV9BV95Qf4a8uutaMZqm-kWVVDg-1As841aGmxp6sKazSDqwy9dwiftvtpL8lZCbXHq7-ck7fsYbd8DLbP66flYhsYocUQFNpKjloDgEmEEgI0hzJJIYGSARZFZEVRqMKqY5hU60gZUWpQlnFuuZiTm-m3d93XiH7Im8obrGtosRt9zuMklkLIVB3QcEKN67x3WOa9qxpw-5yz_CgxP0rMVZRPEg-D22lQ9dD_B_8C0Fpzfw</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Otsuka, Shintaro</creator><creator>Kato, Takashi</creator><creator>Kyomi, Takuya</creator><creator>Hamada, Yoshifumi</creator><creator>Tada, Yoshihiro</creator><creator>Shimizu, Tomohiro</creator><creator>Shingubara, Shoso</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown</title><author>Otsuka, Shintaro ; Kato, Takashi ; Kyomi, Takuya ; Hamada, Yoshifumi ; Tada, Yoshihiro ; Shimizu, Tomohiro ; Shingubara, Shoso</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-b7d41e77aaac83533a71af89a8af0aebb2d3bb5bd53bb5c97725c3f7a5d011d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Conduction heating</topic><topic>Copper</topic><topic>Devices</topic><topic>Gold</topic><topic>Scanning electron microscopy</topic><topic>Silicon dioxide</topic><topic>Switching</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Otsuka, Shintaro</creatorcontrib><creatorcontrib>Kato, Takashi</creatorcontrib><creatorcontrib>Kyomi, Takuya</creatorcontrib><creatorcontrib>Hamada, Yoshifumi</creatorcontrib><creatorcontrib>Tada, Yoshihiro</creatorcontrib><creatorcontrib>Shimizu, Tomohiro</creatorcontrib><creatorcontrib>Shingubara, Shoso</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Otsuka, Shintaro</au><au>Kato, Takashi</au><au>Kyomi, Takuya</au><au>Hamada, Yoshifumi</au><au>Tada, Yoshihiro</au><au>Shimizu, Tomohiro</au><au>Shingubara, Shoso</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2013-06-01</date><risdate>2013</risdate><volume>52</volume><issue>6</issue><spage>06GF04</spage><epage>06GF04-5</epage><pages>06GF04-06GF04-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>An investigation of current--voltage ($I$--$V$) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO 2 /Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO 2 /Au device from these results.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.52.06GF04</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.06GF04-06GF04-5 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1686433495 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Conduction heating Copper Devices Gold Scanning electron microscopy Silicon dioxide Switching Temperature dependence |
| title | Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T02%3A34%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature%20Dependence%20of%20Resistance%20of%20Conductive%20Filament%20Formed%20by%20Dielectric%20Breakdown&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Otsuka,%20Shintaro&rft.date=2013-06-01&rft.volume=52&rft.issue=6&rft.spage=06GF04&rft.epage=06GF04-5&rft.pages=06GF04-06GF04-5&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.52.06GF04&rft_dat=%3Cproquest_cross%3E1686433495%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1686433495&rft_id=info:pmid/&rfr_iscdi=true |