Graphene-GaN Schottky diodes

The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of -10^7 at ±2 V and a low reverse leakage current of 1.0 × 10^-8 A/cm^2 at -5 V were observed. The Schottky barrier heights,...

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Veröffentlicht in:	Nano research 2015-04, Vol.8 (4), p.1327-1338
Hauptverfasser:	Kim, Seongjun, Seo, Tae Hoon, Kim, Myung Jong, Song, Keun Man, Suh, Eun-Kyung, Kim, Hyunsoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic/Molecular Structure and Spectra Barriers Biomedicine Biotechnology Chemical vapor deposition Chemistry and Materials Science Condensed Matter Physics Electrons Gallium nitrides GaN Graphene Light emitting diodes Materials Science Mathematical models N-type semiconductors Nanotechnology Organic chemicals Plasma etching Research Article S parameters Semiconductors Spectrum analysis Work functions 势垒高度整流特性氮化镓半导体石墨肖特基二极管肖特基整流器表面状态
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