High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N sub(2) gas field ion source
Quantum point contacts (QPCs) in high-In-content InGaAs modulation-doped heterostructures fabricated using a focused ion beam (FIB) system equipped with a N sub(2) gas field ion source (GFIS) are demonstrated. The minimum physical size of the fabricated QPCs in this study is ~30 nm, which is smaller...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-01, Vol.53 (11), p.118002-1-118002-3 |
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| container_end_page | 1-118002-3 |
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| container_issue | 11 |
| container_start_page | 118002 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | Akabori, Masashi Hidaka, Shiro Yamada, Syoji Kozakai, Tomokazu Matsuda, Osamu Yasaka, Anto |
| description | Quantum point contacts (QPCs) in high-In-content InGaAs modulation-doped heterostructures fabricated using a focused ion beam (FIB) system equipped with a N sub(2) gas field ion source (GFIS) are demonstrated. The minimum physical size of the fabricated QPCs in this study is ~30 nm, which is smaller than the typical physical size of QPCs (>50 nm) obtained by electron beam lithography and etching techniques. In addition, the fabricated QPCs are characterized electrically at low temperatures with magnetic fields. Since some of them show conductance quantization behaviors, the results indicate that the GFIS-FIB process is promising for quantum device fabrication. |
| doi_str_mv | 10.7567/JJAP.53.118002 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2014-01, Vol.53 (11), p.118002-1-118002-3 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1685811172 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Conductance Devices Electron beam lithography Etching Ground fault interruptions Ion beams Ion sources Magnetic fields Point contact |
| title | High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N sub(2) gas field ion source |
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