Alloying of materials and energy barriers of photoelectric thermal cells

Alloying of materials and energy barriers of photoelectric thermal cells

The possibility for designing highly effective photoelectric thermal cells on the basis of heavily alloyed narrow-zone semiconductors with forbidden bandwidths of 0.3–0.4 eV is discussed.

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Veröffentlicht in:Applied solar energy 2014-10, Vol.50 (4), p.252-252
1. Verfasser: Saidov, M. S.
Format: Artikel
Sprache:eng
Schlagworte:
Alloying
Barriers
Couples
Electrical Machines and Networks
Energy
Engineering
Heat
Heliotechnical Materials Science
Materials science
Photoelectricity
Physics
Power Electronics
Semiconductors
Solar energy
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Beschreibung
Zusammenfassung:The possibility for designing highly effective photoelectric thermal cells on the basis of heavily alloyed narrow-zone semiconductors with forbidden bandwidths of 0.3–0.4 eV is discussed.
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X14040148