Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory

The degradation behavior of the Ti/HfOx bipolar resistive random access memory (RRAM) during endurance cycles, and the operational parameters, which induce the endurance failure, are studied through the two proposed stressing methods. The over-RESET energy is considered to be the key electrical para...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2014-08, Vol.53 (8S1), p.8-1-08LE01-5
Hauptverfasser:	Lee, Heng Yuan, Chen, Yu Sheng, Chen, Pang Shiu, Tsai, Chen Han, Gu, Pei Yi, Wu, Tai Yuan, Tsai, Kan Hseuh, Rahaman, Shakh Ziaur, Chen, Wei Su, Chen, Frederick, Tsai, Ming-Jing, Lee, Ming Hung, Ku, Tzu Kun
Format:	Artikel
Sprache:	eng
Schlagworte:	Data storage Degradation Durability Endurance Failure Filaments Mathematical models Memory devices Titanium
Online-Zugang:	Volltext
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