Imaging performance of mesh supported pellicle for extreme ultraviolet lithography
Extreme ultraviolet (EUV) lithography is the first candidate for 16 nm half pitch devices and EUV pellicle is needed for mask defect control. In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the over...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-06, Vol.53 (6S), p.6-1-06JA02-6 |
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| container_end_page | 1-06JA02-6 |
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| container_issue | 6S |
| container_start_page | 6 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | Ko, Ki-Ho Kim, Guk-Jin Yeung, Michael Barouch, Eytan Oh, Hye-Keun |
| description | Extreme ultraviolet (EUV) lithography is the first candidate for 16 nm half pitch devices and EUV pellicle is needed for mask defect control. In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the overall transmission drop caused by the pellicle structure might change the line width even though the contrast of the aerial image remained almost the same. The aerial images of 16 nm line and space pattern with various pellicle structures are studied to see the effect of the meshed pellicle variables. Smaller mesh height and width, and larger mesh pitch of the pellicle support are preferred since transmission is better. |
| doi_str_mv | 10.7567/JJAP.53.06JA02 |
| format | Article |
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In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the overall transmission drop caused by the pellicle structure might change the line width even though the contrast of the aerial image remained almost the same. The aerial images of 16 nm line and space pattern with various pellicle structures are studied to see the effect of the meshed pellicle variables. 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J. Appl. Phys</addtitle><description>Extreme ultraviolet (EUV) lithography is the first candidate for 16 nm half pitch devices and EUV pellicle is needed for mask defect control. In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the overall transmission drop caused by the pellicle structure might change the line width even though the contrast of the aerial image remained almost the same. The aerial images of 16 nm line and space pattern with various pellicle structures are studied to see the effect of the meshed pellicle variables. Smaller mesh height and width, and larger mesh pitch of the pellicle support are preferred since transmission is better.</description><subject>Aerials</subject><subject>Computer simulation</subject><subject>Finite element method</subject><subject>Image transmission</subject><subject>Lithography</subject><subject>Patterning</subject><subject>Pellicle</subject><subject>Ultraviolet</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kEtPwzAQhC0EEqVw5ewjICX47eRYVTxaVQLxOFtu4rSJktrYCaL_HlfpEU6r1X4z2hkArjFKJRfyfrmcvaacpkgsZ4icgAmmTCYMCX4KJggRnLCckHNwEUITV8EZnoC3Rac39W4DnfGV9Z3eFQbaCnYmbGEYnLO-N2W8tm1dtAZGBpqf3pvOwKHtvf6ubWt62Nb91m68dtv9JTirdBvM1XFOwefjw8f8OVm9PC3ms1VSMCT7pCyxJpwVa1TmhWFEImF0JgnSWU4wI7gS0rBqveaUcsqFyHhOCRGZoJJQpOkU3Iy-ztuvwYRedXUo4qN6Z-wQFI4KmbOc0oimI1p4G4I3lXK-7rTfK4zUoTx1KE9xqsbyouB2FNTWqcYOfheTqKbR7gCJ9yOnXFlF9u4P9h_jX_WkfXM</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Ko, Ki-Ho</creator><creator>Kim, Guk-Jin</creator><creator>Yeung, Michael</creator><creator>Barouch, Eytan</creator><creator>Oh, Hye-Keun</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140601</creationdate><title>Imaging performance of mesh supported pellicle for extreme ultraviolet lithography</title><author>Ko, Ki-Ho ; Kim, Guk-Jin ; Yeung, Michael ; Barouch, Eytan ; Oh, Hye-Keun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-dd1a254cb0d9ce42706ea8720a8921421f67e4fbb5335356685932268637230a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Aerials</topic><topic>Computer simulation</topic><topic>Finite element method</topic><topic>Image transmission</topic><topic>Lithography</topic><topic>Patterning</topic><topic>Pellicle</topic><topic>Ultraviolet</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ko, Ki-Ho</creatorcontrib><creatorcontrib>Kim, Guk-Jin</creatorcontrib><creatorcontrib>Yeung, Michael</creatorcontrib><creatorcontrib>Barouch, Eytan</creatorcontrib><creatorcontrib>Oh, Hye-Keun</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ko, Ki-Ho</au><au>Kim, Guk-Jin</au><au>Yeung, Michael</au><au>Barouch, Eytan</au><au>Oh, Hye-Keun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Imaging performance of mesh supported pellicle for extreme ultraviolet lithography</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-06-01</date><risdate>2014</risdate><volume>53</volume><issue>6S</issue><spage>6</spage><epage>1-06JA02-6</epage><pages>6-1-06JA02-6</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Extreme ultraviolet (EUV) lithography is the first candidate for 16 nm half pitch devices and EUV pellicle is needed for mask defect control. In order to check the effect of the pellicle on the EUV patterning, aerial image simulation including the meshed pellicle is performed. We found that the overall transmission drop caused by the pellicle structure might change the line width even though the contrast of the aerial image remained almost the same. The aerial images of 16 nm line and space pattern with various pellicle structures are studied to see the effect of the meshed pellicle variables. 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| source | Institute of Physics Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aerials Computer simulation Finite element method Image transmission Lithography Patterning Pellicle Ultraviolet |
| title | Imaging performance of mesh supported pellicle for extreme ultraviolet lithography |
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