Damage evolution and amorphization in semiconductors under ion irradiation

The interaction of energetic ions with crystalline semiconductors may cause defect formation and amorphization both by nuclear and electronic energy deposition which occur simultaneously with different strength. In the energy range of dominating nuclear energy loss the transition to the amorphous st...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2012-04, Vol.277, p.58-69
Hauptverfasser:	Wesch, W., Wendler, E., Schnohr, C.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphization Damage Electronics Energy (nuclear) Evolution Formations Ion irradiation Irradiation Semiconductors
Online-Zugang:	Volltext
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