Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by differ...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2014-08, Vol.53 (8S1), p.8-1-08LE02-5
Hauptverfasser: Schroeder, Uwe, Yurchuk, Ekaterina, Müller, Johannes, Martin, Dominik, Schenk, Tony, Polakowski, Patrick, Adelmann, Christoph, Popovici, Mihaela I., Kalinin, Sergei V., Mikolajick, Thomas
Format: Artikel
Sprache:eng
Schlagworte:
Cycles
Dopants
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Hysteresis
Polarization
Silicon
Thin films
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1-08LE02-5
container_issue 8S1
container_start_page 8
container_title Japanese Journal of Applied Physics
container_volume 53
creator Schroeder, Uwe
Yurchuk, Ekaterina
Müller, Johannes
Martin, Dominik
Schenk, Tony
Polakowski, Patrick
Adelmann, Christoph
Popovici, Mihaela I.
Kalinin, Sergei V.
Mikolajick, Thomas
description The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.
doi_str_mv 10.7567/JJAP.53.08LE02
format Article
fullrecord <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_1685788959</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1685788959</sourcerecordid><originalsourceid>FETCH-LOGICAL-c453t-8380ceaa195423ac5053e88dcf18fbed573d586909bff0eca7bd844b8711614f3</originalsourceid><addsrcrecordid>eNp1kMFLwzAUh4MoOKdXzz2K0Jk0SZsex5i6MVDQnUOavriMralJivrf29Jdd3o8-L4f7_0Quid4VvC8eFqv5-8zTmdYbJY4u0ATQlmRMpzzSzTBOCMpK7PsGt2EsO_XnDMyQdvVsVU6Js4ktTUGPDQxqV2rmhgS1yRxB0n4sVHvbPOVtN614KOFMAg97R0cQEdvdbJTprHd0f3aGm7RlVGHAHenOUXb5-Xn4jXdvL2sFvNNqhmnMRVUYA1KkZKzjCrNMacgRK0NEaaCmhe05iIvcVkZg0GroqoFY5UoCMkJM3SKHsbc_rDvDkKURxs0HA6qAdcFSXLBCyFKXvbobES1dyF4MLL19qj8nyRYDv3JoT_JqRz764XHUbCulXvX-ab_RO73qh0g8UFOoGxrcwY-k_wPIWCAPg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1685788959</pqid></control><display><type>article</type><title>Impact of different dopants on the switching properties of ferroelectric hafniumoxide</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Schroeder, Uwe ; Yurchuk, Ekaterina ; Müller, Johannes ; Martin, Dominik ; Schenk, Tony ; Polakowski, Patrick ; Adelmann, Christoph ; Popovici, Mihaela I. ; Kalinin, Sergei V. ; Mikolajick, Thomas</creator><creatorcontrib>Schroeder, Uwe ; Yurchuk, Ekaterina ; Müller, Johannes ; Martin, Dominik ; Schenk, Tony ; Polakowski, Patrick ; Adelmann, Christoph ; Popovici, Mihaela I. ; Kalinin, Sergei V. ; Mikolajick, Thomas</creatorcontrib><description>The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.08LE02</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Cycles ; Dopants ; Ferroelectric materials ; Ferroelectricity ; Hafnium oxide ; Hysteresis ; Polarization ; Silicon ; Thin films</subject><ispartof>Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8-1-08LE02-5</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-8380ceaa195423ac5053e88dcf18fbed573d586909bff0eca7bd844b8711614f3</citedby><cites>FETCH-LOGICAL-c453t-8380ceaa195423ac5053e88dcf18fbed573d586909bff0eca7bd844b8711614f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.08LE02/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>Yurchuk, Ekaterina</creatorcontrib><creatorcontrib>Müller, Johannes</creatorcontrib><creatorcontrib>Martin, Dominik</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Polakowski, Patrick</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><creatorcontrib>Popovici, Mihaela I.</creatorcontrib><creatorcontrib>Kalinin, Sergei V.</creatorcontrib><creatorcontrib>Mikolajick, Thomas</creatorcontrib><title>Impact of different dopants on the switching properties of ferroelectric hafniumoxide</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.</description><subject>Cycles</subject><subject>Dopants</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Hafnium oxide</subject><subject>Hysteresis</subject><subject>Polarization</subject><subject>Silicon</subject><subject>Thin films</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kMFLwzAUh4MoOKdXzz2K0Jk0SZsex5i6MVDQnUOavriMralJivrf29Jdd3o8-L4f7_0Quid4VvC8eFqv5-8zTmdYbJY4u0ATQlmRMpzzSzTBOCMpK7PsGt2EsO_XnDMyQdvVsVU6Js4ktTUGPDQxqV2rmhgS1yRxB0n4sVHvbPOVtN614KOFMAg97R0cQEdvdbJTprHd0f3aGm7RlVGHAHenOUXb5-Xn4jXdvL2sFvNNqhmnMRVUYA1KkZKzjCrNMacgRK0NEaaCmhe05iIvcVkZg0GroqoFY5UoCMkJM3SKHsbc_rDvDkKURxs0HA6qAdcFSXLBCyFKXvbobES1dyF4MLL19qj8nyRYDv3JoT_JqRz764XHUbCulXvX-ab_RO73qh0g8UFOoGxrcwY-k_wPIWCAPg</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Schroeder, Uwe</creator><creator>Yurchuk, Ekaterina</creator><creator>Müller, Johannes</creator><creator>Martin, Dominik</creator><creator>Schenk, Tony</creator><creator>Polakowski, Patrick</creator><creator>Adelmann, Christoph</creator><creator>Popovici, Mihaela I.</creator><creator>Kalinin, Sergei V.</creator><creator>Mikolajick, Thomas</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140801</creationdate><title>Impact of different dopants on the switching properties of ferroelectric hafniumoxide</title><author>Schroeder, Uwe ; Yurchuk, Ekaterina ; Müller, Johannes ; Martin, Dominik ; Schenk, Tony ; Polakowski, Patrick ; Adelmann, Christoph ; Popovici, Mihaela I. ; Kalinin, Sergei V. ; Mikolajick, Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c453t-8380ceaa195423ac5053e88dcf18fbed573d586909bff0eca7bd844b8711614f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Cycles</topic><topic>Dopants</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Hafnium oxide</topic><topic>Hysteresis</topic><topic>Polarization</topic><topic>Silicon</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schroeder, Uwe</creatorcontrib><creatorcontrib>Yurchuk, Ekaterina</creatorcontrib><creatorcontrib>Müller, Johannes</creatorcontrib><creatorcontrib>Martin, Dominik</creatorcontrib><creatorcontrib>Schenk, Tony</creatorcontrib><creatorcontrib>Polakowski, Patrick</creatorcontrib><creatorcontrib>Adelmann, Christoph</creatorcontrib><creatorcontrib>Popovici, Mihaela I.</creatorcontrib><creatorcontrib>Kalinin, Sergei V.</creatorcontrib><creatorcontrib>Mikolajick, Thomas</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schroeder, Uwe</au><au>Yurchuk, Ekaterina</au><au>Müller, Johannes</au><au>Martin, Dominik</au><au>Schenk, Tony</au><au>Polakowski, Patrick</au><au>Adelmann, Christoph</au><au>Popovici, Mihaela I.</au><au>Kalinin, Sergei V.</au><au>Mikolajick, Thomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of different dopants on the switching properties of ferroelectric hafniumoxide</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-08-01</date><risdate>2014</risdate><volume>53</volume><issue>8S1</issue><spage>8</spage><epage>1-08LE02-5</epage><pages>8-1-08LE02-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The wake-up behavior of ferroelectric thin film capacitors based on doped hafnium oxide dielectrics in TiN-based metal-insulator-metal structures is reported. After field cycling a remanent polarization up to 40 µC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with a crystal radius ranging from 54 pm (Si) to 132 pm (Sr) was evaluated. In all cases, an improved polarization-voltage hysteresis after wake-up cycling is visible. For smaller dopant atoms like Si and Al stronger pinching of the polarization hysteresis appeared with increasing dopant concentration and proved to be stable during cycling.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.08LE02</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8-1-08LE02-5
issn 0021-4922
1347-4065
language eng
recordid cdi_proquest_miscellaneous_1685788959
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Cycles
Dopants
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Hysteresis
Polarization
Silicon
Thin films
title Impact of different dopants on the switching properties of ferroelectric hafniumoxide
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T18%3A15%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20different%20dopants%20on%20the%20switching%20properties%20of%20ferroelectric%20hafniumoxide&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Schroeder,%20Uwe&rft.date=2014-08-01&rft.volume=53&rft.issue=8S1&rft.spage=8&rft.epage=1-08LE02-5&rft.pages=8-1-08LE02-5&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.53.08LE02&rft_dat=%3Cproquest_iop_j%3E1685788959%3C/proquest_iop_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1685788959&rft_id=info:pmid/&rfr_iscdi=true