Characterization of a-plane InGaN light-emitting diodes with a SiN sub(x) interlayer grown on a patterned sapphire substrate by metal-organic chemical vapor deposition

Nonpolar, a-plane InGaN light-emitting diodes (LEDs) were grown on a hemispherical r-plane patterned sapphire substrate (HPSS) by the in situ deposition of SiN sub(x) masks and on a planar sapphire substrate by metalorganic chemical deposition (MOCVD). The use of the SiN sub(x) interlayer together w...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2014-01, Vol.53 (11), p.111001-1-111001-5
Hauptverfasser:	Yoo, Geunho, Min, Daehong, Lee, Kyseung, Jang, Jongjin, Moon, Seunghwan, Chae, Sooryong, Kim, Jaehwan, Nam, Okhyun
Format:	Artikel
Sprache:	eng
Schlagworte:	Basal plane Density Deposition Dislocations Gallium nitrides Indium gallium nitrides Interlayers Light-emitting diodes Sapphire
Online-Zugang:	Volltext
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