Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy
Electrical properties and deep electron and hole traps spectra are compared for undoped n‐GaN films grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates at 850 °C (Group 1) and 950 °C (Group 2). Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low dens...
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| Veröffentlicht in: | Physica status solidi. C 2015-04, Vol.12 (4-5), p.341-344 |
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| container_issue | 4-5 |
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| container_title | Physica status solidi. C |
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| creator | Polyakov, Alexander Smirnov, Nikolai Govorkov, Anatoli Kozhukhova, Elena Yugova, Tatiana Usikov, Alexander Helava, Heikki Makarov, Yuri |
| description | Electrical properties and deep electron and hole traps spectra are compared for undoped n‐GaN films grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates at 850 °C (Group 1) and 950 °C (Group 2). Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low density of electron and hole traps, low leakage current of Schottky diodes. Group 2 samples are not very different from the usual thick HVPE samples in terms of predominant electron and hole traps and MCL spectra. But the concentration of both electron and hole traps is quite high and could contribute to rather high reverse leakage current, low photocurrent and pronounced tunneling. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201400173 |
| format | Article |
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Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low density of electron and hole traps, low leakage current of Schottky diodes. Group 2 samples are not very different from the usual thick HVPE samples in terms of predominant electron and hole traps and MCL spectra. But the concentration of both electron and hole traps is quite high and could contribute to rather high reverse leakage current, low photocurrent and pronounced tunneling. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201400173</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>deep traps ; Density ; Electrical properties ; Electrons ; Epitaxial growth ; Gallium nitrides ; Hole traps ; hydride vapour phase epitaxy ; Hydrides ; Leakage current ; Photocurrent ; Photoelectric effect ; Photoelectric emission ; Sapphire ; Schottky diodes ; Solid state physics ; Spectra ; Substrates ; undoped GaN films ; Vapor phase epitaxy ; Vapor phases</subject><ispartof>Physica status solidi. C, 2015-04, Vol.12 (4-5), p.341-344</ispartof><rights>Copyright © 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright Wiley Subscription Services, Inc. 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C</title><addtitle>Phys. Status Solidi C</addtitle><description>Electrical properties and deep electron and hole traps spectra are compared for undoped n‐GaN films grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates at 850 °C (Group 1) and 950 °C (Group 2). Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low density of electron and hole traps, low leakage current of Schottky diodes. Group 2 samples are not very different from the usual thick HVPE samples in terms of predominant electron and hole traps and MCL spectra. But the concentration of both electron and hole traps is quite high and could contribute to rather high reverse leakage current, low photocurrent and pronounced tunneling. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>deep traps</subject><subject>Density</subject><subject>Electrical properties</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>Hole traps</subject><subject>hydride vapour phase epitaxy</subject><subject>Hydrides</subject><subject>Leakage current</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Sapphire</subject><subject>Schottky diodes</subject><subject>Solid state physics</subject><subject>Spectra</subject><subject>Substrates</subject><subject>undoped GaN films</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkc9P2zAYhqNpSGPAdWdLXHZJ8effObJq65BQARW03SzHcakhTTw7peS_x1UnNHEYJ7-Sn8f6Pr9F8QXwBDAmZyElOyEYGMYg6YfiEATgEgQjH3NWgpSCcvhUfE7pAWPKMYjDor1Yh9g_uQbNzBwtfbtOaOuHFWr7LaqNfbyP_aZrUNMH390jk-PupnEuoCGakFOX_DCizG07VI9oNTbRNw49mdBHFFYmOeSCH8zzeFwcLE2b3Mnf86i4-_H9dvqzvLyaXUzPL0vLGNDS1rIhQjFrMV4qKgkhwKh1wgGWtaBYcstqUclKNVxUFVgiFTNEYSWVAEePiq_7d_NqfzYuDXrtk3VtazrXb5IGobhUkrEqo6dv0Id-E7s8nc5fKSsqOaf_o0BIqgjlHGdqsqds7FOKbqlD9GsTRw1Y7yrSu4r0a0VZqPbC1rdufIfW14vF9F-33Ls-De751TXxUeeJJNe_5jM9_7YAdjOb6t_0BWuGopA</recordid><startdate>201504</startdate><enddate>201504</enddate><creator>Polyakov, Alexander</creator><creator>Smirnov, Nikolai</creator><creator>Govorkov, Anatoli</creator><creator>Kozhukhova, Elena</creator><creator>Yugova, Tatiana</creator><creator>Usikov, Alexander</creator><creator>Helava, Heikki</creator><creator>Makarov, Yuri</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QQ</scope><scope>7SR</scope><scope>JG9</scope></search><sort><creationdate>201504</creationdate><title>Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy</title><author>Polyakov, Alexander ; Smirnov, Nikolai ; Govorkov, Anatoli ; Kozhukhova, Elena ; Yugova, Tatiana ; Usikov, Alexander ; Helava, Heikki ; Makarov, Yuri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4413-cb7d2684cc00f837222143ce6e107b63075c4b69798d56991c2784a28087861e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>deep traps</topic><topic>Density</topic><topic>Electrical properties</topic><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>Hole traps</topic><topic>hydride vapour phase epitaxy</topic><topic>Hydrides</topic><topic>Leakage current</topic><topic>Photocurrent</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Sapphire</topic><topic>Schottky diodes</topic><topic>Solid state physics</topic><topic>Spectra</topic><topic>Substrates</topic><topic>undoped GaN films</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Polyakov, Alexander</creatorcontrib><creatorcontrib>Smirnov, Nikolai</creatorcontrib><creatorcontrib>Govorkov, Anatoli</creatorcontrib><creatorcontrib>Kozhukhova, Elena</creatorcontrib><creatorcontrib>Yugova, Tatiana</creatorcontrib><creatorcontrib>Usikov, Alexander</creatorcontrib><creatorcontrib>Helava, Heikki</creatorcontrib><creatorcontrib>Makarov, Yuri</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. 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Status Solidi C</addtitle><date>2015-04</date><risdate>2015</risdate><volume>12</volume><issue>4-5</issue><spage>341</spage><epage>344</epage><pages>341-344</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Electrical properties and deep electron and hole traps spectra are compared for undoped n‐GaN films grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates at 850 °C (Group 1) and 950 °C (Group 2). Group 1 samples have very low residual donor concentration ((2‐5)×1014 cm‐3), very low density of electron and hole traps, low leakage current of Schottky diodes. Group 2 samples are not very different from the usual thick HVPE samples in terms of predominant electron and hole traps and MCL spectra. But the concentration of both electron and hole traps is quite high and could contribute to rather high reverse leakage current, low photocurrent and pronounced tunneling. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201400173</doi><tpages>4</tpages></addata></record> |
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| subjects | deep traps Density Electrical properties Electrons Epitaxial growth Gallium nitrides Hole traps hydride vapour phase epitaxy Hydrides Leakage current Photocurrent Photoelectric effect Photoelectric emission Sapphire Schottky diodes Solid state physics Spectra Substrates undoped GaN films Vapor phase epitaxy Vapor phases |
| title | Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy |
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