Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = −100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to e...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2015-04, Vol.54 (4S), p.4-1-04DF07-4 |
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| container_end_page | 1-04DF07-4 |
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| container_issue | 4S |
| container_start_page | 4 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 54 |
| creator | Hu, Jie Stoffels, Steve Lenci, Silvia Wu, Tian-Li Ronchi, Nicolò You, Shuzhen Bakeroot, Benoit Groeseneken, Guido Decoutere, Stefaan |
| description | In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = −100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures. |
| doi_str_mv | 10.7567/JJAP.54.04DF07 |
| format | Article |
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The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.54.04DF07</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Aluminum gallium nitrides ; Barriers ; Constants ; Diodes ; Electric potential ; Gallium nitrides ; Stressing ; Voltage</subject><ispartof>Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF07-4</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-edcbadcd224a1ece5421df50727329584b0dd059a2d851205f921745125d07363</citedby><cites>FETCH-LOGICAL-c373t-edcbadcd224a1ece5421df50727329584b0dd059a2d851205f921745125d07363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.54.04DF07/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53825,53872</link.rule.ids></links><search><creatorcontrib>Hu, Jie</creatorcontrib><creatorcontrib>Stoffels, Steve</creatorcontrib><creatorcontrib>Lenci, Silvia</creatorcontrib><creatorcontrib>Wu, Tian-Li</creatorcontrib><creatorcontrib>Ronchi, Nicolò</creatorcontrib><creatorcontrib>You, Shuzhen</creatorcontrib><creatorcontrib>Bakeroot, Benoit</creatorcontrib><creatorcontrib>Groeseneken, Guido</creatorcontrib><creatorcontrib>Decoutere, Stefaan</creatorcontrib><title>Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = −100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.</description><subject>Aluminum gallium nitrides</subject><subject>Barriers</subject><subject>Constants</subject><subject>Diodes</subject><subject>Electric potential</subject><subject>Gallium nitrides</subject><subject>Stressing</subject><subject>Voltage</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LwzAYxoMoOKdXzzmK0C5Jk2Y9lunmZKignkOWpDOza2aSDvbfm1GvHl7eD37PC88DwC1GOWclnzw_1285ozmiD3PEz8AIF5RnFJXsHIwQIjijFSGX4CqEbVpLRvEIiGV3MCHajYzWddA1ULkuRNlFeHBtlBuTbk2WLtHAEL0JASau7rPGGwPrdiFfJqngu_pyMX4f4Vp6b42H2jptwjW4aGQbzM1fH4PP-ePH7ClbvS6Ws3qVqYIXMTNaraVWmhAqsVGGUYJ1wxAnvCAVm9I10hqxShI9ZZgg1lQEc5pGphEvymIM7oa_e-9--uRI7GxQpm1lZ1wfBC6njCcpLhKaD6jyLgRvGrH3dif9UWAkTkmKU5KCUTEkmQT3g8C6vdi63nfJyX_wLzGSc1o</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Hu, Jie</creator><creator>Stoffels, Steve</creator><creator>Lenci, Silvia</creator><creator>Wu, Tian-Li</creator><creator>Ronchi, Nicolò</creator><creator>You, Shuzhen</creator><creator>Bakeroot, Benoit</creator><creator>Groeseneken, Guido</creator><creator>Decoutere, Stefaan</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150401</creationdate><title>Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes</title><author>Hu, Jie ; Stoffels, Steve ; Lenci, Silvia ; Wu, Tian-Li ; Ronchi, Nicolò ; You, Shuzhen ; Bakeroot, Benoit ; Groeseneken, Guido ; Decoutere, Stefaan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-edcbadcd224a1ece5421df50727329584b0dd059a2d851205f921745125d07363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum gallium nitrides</topic><topic>Barriers</topic><topic>Constants</topic><topic>Diodes</topic><topic>Electric potential</topic><topic>Gallium nitrides</topic><topic>Stressing</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Jie</creatorcontrib><creatorcontrib>Stoffels, Steve</creatorcontrib><creatorcontrib>Lenci, Silvia</creatorcontrib><creatorcontrib>Wu, Tian-Li</creatorcontrib><creatorcontrib>Ronchi, Nicolò</creatorcontrib><creatorcontrib>You, Shuzhen</creatorcontrib><creatorcontrib>Bakeroot, Benoit</creatorcontrib><creatorcontrib>Groeseneken, Guido</creatorcontrib><creatorcontrib>Decoutere, Stefaan</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, Jie</au><au>Stoffels, Steve</au><au>Lenci, Silvia</au><au>Wu, Tian-Li</au><au>Ronchi, Nicolò</au><au>You, Shuzhen</au><au>Bakeroot, Benoit</au><au>Groeseneken, Guido</au><au>Decoutere, Stefaan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2015-04-01</date><risdate>2015</risdate><volume>54</volume><issue>4S</issue><spage>4</spage><epage>1-04DF07-4</epage><pages>4-1-04DF07-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>In this work, we perform an in-depth analysis of electron-trapping in AlGaN/GaN Schottky barrier diodes under constant voltage (VAC = −100 V) off-state stress conditions. The current-voltage (I-V) characteristics of the diode after stressing show a leakage reduction and on-state degradation due to electron-trapping occurring in the vicinity of the Schottky contact. Capacitance-voltage (C-V) measurements confirm an increase of the barrier height and the on-resistance of the stressed device. Furthermore, the on-resistance increase has been studied with different temperatures and stressing times. By TCAD simulations, a lateral extension of the "trapped region at the AlGaN/Si3N4 interface has been visualized and can qualitatively explain the phenomenon of higher on-resistance increase at higher temperatures.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.54.04DF07</doi></addata></record> |
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| source | Institute of Physics Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aluminum gallium nitrides Barriers Constants Diodes Electric potential Gallium nitrides Stressing Voltage |
| title | Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes |
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