The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology
The influence of titanium doping on the electric properties of amorphous alumina (Al 2 O 3 ) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al 2−x Ti x O y . The XPS analysis reveals that the ti...
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| Veröffentlicht in: | Journal of sol-gel science and technology 2015-04, Vol.74 (1), p.39-44 |
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| container_title | Journal of sol-gel science and technology |
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| creator | Yao, Manwen Xiao, Ruihua Peng, Yong Chen, Jianwen Hu, Baofu Yao, Xi |
| description | The influence of titanium doping on the electric properties of amorphous alumina (Al
2
O
3
) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al
2−x
Ti
x
O
y
. The XPS analysis reveals that the titanium exists in the form of TiO
2
. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al
2
O
3
films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al
2
O
3
films is 5.3 MV/cm. Compared with the undoped Al
2
O
3
films, the soft breakdown of Ti-doped Al
2
O
3
films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al
2
O
3
films. |
| doi_str_mv | 10.1007/s10971-014-3568-1 |
| format | Article |
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2
O
3
) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al
2−x
Ti
x
O
y
. The XPS analysis reveals that the titanium exists in the form of TiO
2
. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al
2
O
3
films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al
2
O
3
films is 5.3 MV/cm. Compared with the undoped Al
2
O
3
films, the soft breakdown of Ti-doped Al
2
O
3
films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al
2
O
3
films.</description><identifier>ISSN: 0928-0707</identifier><identifier>EISSN: 1573-4846</identifier><identifier>DOI: 10.1007/s10971-014-3568-1</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Aluminum oxide ; Breakdown ; Ceramics ; Chemistry and Materials Science ; Composites ; Dielectric strength ; Doped films ; Doping ; Electric properties ; Glass ; Inorganic Chemistry ; Mapping ; Materials Science ; Nanotechnology ; Natural Materials ; Optical and Electronic Materials ; Original Paper ; Sol gel process ; Sol-gel processes ; Titanium ; Titanium dioxide ; X ray photoelectron spectroscopy</subject><ispartof>Journal of sol-gel science and technology, 2015-04, Vol.74 (1), p.39-44</ispartof><rights>Springer Science+Business Media New York 2014</rights><rights>Journal of Sol-Gel Science and Technology is a copyright of Springer, (2014). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-ed79cd50818b43f6a97e8ca043646a7a15265faaf823292b592697f36bd055a43</citedby><cites>FETCH-LOGICAL-c419t-ed79cd50818b43f6a97e8ca043646a7a15265faaf823292b592697f36bd055a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10971-014-3568-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10971-014-3568-1$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Yao, Manwen</creatorcontrib><creatorcontrib>Xiao, Ruihua</creatorcontrib><creatorcontrib>Peng, Yong</creatorcontrib><creatorcontrib>Chen, Jianwen</creatorcontrib><creatorcontrib>Hu, Baofu</creatorcontrib><creatorcontrib>Yao, Xi</creatorcontrib><title>The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology</title><title>Journal of sol-gel science and technology</title><addtitle>J Sol-Gel Sci Technol</addtitle><description>The influence of titanium doping on the electric properties of amorphous alumina (Al
2
O
3
) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al
2−x
Ti
x
O
y
. The XPS analysis reveals that the titanium exists in the form of TiO
2
. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al
2
O
3
films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al
2
O
3
films is 5.3 MV/cm. Compared with the undoped Al
2
O
3
films, the soft breakdown of Ti-doped Al
2
O
3
films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al
2
O
3
films.</description><subject>Aluminum oxide</subject><subject>Breakdown</subject><subject>Ceramics</subject><subject>Chemistry and Materials Science</subject><subject>Composites</subject><subject>Dielectric strength</subject><subject>Doped films</subject><subject>Doping</subject><subject>Electric properties</subject><subject>Glass</subject><subject>Inorganic Chemistry</subject><subject>Mapping</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Original Paper</subject><subject>Sol gel process</subject><subject>Sol-gel processes</subject><subject>Titanium</subject><subject>Titanium dioxide</subject><subject>X ray photoelectron spectroscopy</subject><issn>0928-0707</issn><issn>1573-4846</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1kc2KFDEURoMo2I4-wOwCbtzUmKTyu5TBn4EBN-M6pFM33RlSSZlUIb3zHXxDn2TStCAIru7m3MMHB6FrSm4oIep9o8QoOhDKh1FIPdBnaEeFGgeuuXyOdsQwPRBF1Ev0qrVHQojgVO3Qj4cj4JhD2iB7wCXgNa4ux23GU1liPuCS8doZSODXGj1ealmgrhHamXZzqcuxbA27tM0xOxximlunYHEVJrw_4VbS75-_DpDwCv6YSyqH02v0IrjU4M2fe4W-ffr4cPtluP_6-e72w_3gOTXrAJMyfhJEU73nY5DOKNDeET5KLp1yVDApgnNBs5EZtheGSaPCKPcTEcLx8Qq9u3j77O8btNXOsXlIyWXoqy2VWijNmaIdffsP-li2mvs6y5gwgpuu7BS9UL6W1ioEu9Q4u3qylNhzCntJYXsKe05hz2Z2-WmdzQeof83_f3oCFXCNvg</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Yao, Manwen</creator><creator>Xiao, Ruihua</creator><creator>Peng, Yong</creator><creator>Chen, Jianwen</creator><creator>Hu, Baofu</creator><creator>Yao, Xi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150401</creationdate><title>The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology</title><author>Yao, Manwen ; Xiao, Ruihua ; Peng, Yong ; Chen, Jianwen ; Hu, Baofu ; Yao, Xi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-ed79cd50818b43f6a97e8ca043646a7a15265faaf823292b592697f36bd055a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum oxide</topic><topic>Breakdown</topic><topic>Ceramics</topic><topic>Chemistry and Materials Science</topic><topic>Composites</topic><topic>Dielectric strength</topic><topic>Doped films</topic><topic>Doping</topic><topic>Electric properties</topic><topic>Glass</topic><topic>Inorganic Chemistry</topic><topic>Mapping</topic><topic>Materials Science</topic><topic>Nanotechnology</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Original Paper</topic><topic>Sol gel process</topic><topic>Sol-gel processes</topic><topic>Titanium</topic><topic>Titanium dioxide</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yao, Manwen</creatorcontrib><creatorcontrib>Xiao, Ruihua</creatorcontrib><creatorcontrib>Peng, Yong</creatorcontrib><creatorcontrib>Chen, Jianwen</creatorcontrib><creatorcontrib>Hu, Baofu</creatorcontrib><creatorcontrib>Yao, Xi</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of sol-gel science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yao, Manwen</au><au>Xiao, Ruihua</au><au>Peng, Yong</au><au>Chen, Jianwen</au><au>Hu, Baofu</au><au>Yao, Xi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology</atitle><jtitle>Journal of sol-gel science and technology</jtitle><stitle>J Sol-Gel Sci Technol</stitle><date>2015-04-01</date><risdate>2015</risdate><volume>74</volume><issue>1</issue><spage>39</spage><epage>44</epage><pages>39-44</pages><issn>0928-0707</issn><eissn>1573-4846</eissn><abstract>The influence of titanium doping on the electric properties of amorphous alumina (Al
2
O
3
) films prepared by sol–gel technology was investigated. EDX mapping analysis indicates that the titanium cations are uniformly distributed in the film as Al
2−x
Ti
x
O
y
. The XPS analysis reveals that the titanium exists in the form of TiO
2
. The breakdown strength of the doped film can be much enhanced by the titanium doping. The dielectric strength of undoped Al
2
O
3
films is 3.4 MV/cm, while the breakdown strength of the 10 % Ti-doped Al
2
O
3
films is 5.3 MV/cm. Compared with the undoped Al
2
O
3
films, the soft breakdown of Ti-doped Al
2
O
3
films is gradually suppressed with the increasing of the titanium doping amount. Especially, there is hardly any soft breakdown observed for 10 % Ti-doped Al
2
O
3
films.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10971-014-3568-1</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0928-0707 |
| ispartof | Journal of sol-gel science and technology, 2015-04, Vol.74 (1), p.39-44 |
| issn | 0928-0707 1573-4846 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1685784271 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Aluminum oxide Breakdown Ceramics Chemistry and Materials Science Composites Dielectric strength Doped films Doping Electric properties Glass Inorganic Chemistry Mapping Materials Science Nanotechnology Natural Materials Optical and Electronic Materials Original Paper Sol gel process Sol-gel processes Titanium Titanium dioxide X ray photoelectron spectroscopy |
| title | The influence of titanium doping on the electric properties of amorphous alumina films prepared by sol–gel technology |
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