Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

In this work we will present the experimental path followed to optimize the dynamic ON-resistance (RDS-ON) dispersion and to reduce the threshold voltage shift of AlGaN/GaN transistors grown on 200 mm Si wafers. Firstly, it will be demonstrated that a SiN gate dielectric grown by means of plasma enh...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-04, Vol.54 (4S), p.4-1-04DF02-4
Hauptverfasser:	Ronchi, Nicolò, De Jaeger, Brice, Van Hove, Marleen, Roelofs, Robin, Wu, Tian-Li, Hu, Jie, Kang, Xuanwu, Decoutere, Stefaan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Dielectrics Dispersions Dynamics Gallium nitrides Gates Threshold voltage Wafers
Online-Zugang:	Volltext
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